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{{lithography processes}}
 
{{lithography processes}}
The '''80 nm lithography process''' is a [[technology node#half node|half-node]] semiconductor manufacturing process used as a stopgap between the [[90 nm lithography process|90 nm]] and [[65 nm lithography process|65 nm]] processes. Commercial [[integrated circuit]] manufacturing using 40 nm process began around 2004. This technology superseded by commercial [[65 nm lithography process|65 nm process]] by 2006.
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The '''80 nanometer (80 nm) lithography process''' is a [[technology node#half node|half-node]] semiconductor manufacturing process used as a stopgap between the [[90 nm lithography process|90 nm]] and [[65 nm lithography process|65 nm]] processes. Commercial [[integrated circuit]] manufacturing using 40 nm process began around 2004. This technology superseded by commercial [[65 nm lithography process|65 nm process]] by 2006.
  
 
== Industry ==
 
== Industry ==

Revision as of 03:55, 24 May 2016

The 80 nanometer (80 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 90 nm and 65 nm processes. Commercial integrated circuit manufacturing using 40 nm process began around 2004. This technology superseded by commercial 65 nm process by 2006.

Industry

Fab
1st Production​
Wafer​
 ​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell
TSMC Samsung
2005 2005
300mm
Value 90 nm Δ Value 90 nm Δ
 ? nm  ?x  ? nm  ?x
 ? nm  ?x  ? nm  ?x
 ? µm2  ?x  ? µm2  ?x

80 nm Microprocessors

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80 nm System on Chips

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