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Difference between revisions of "16 nm lithography process"
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| − | The '''16 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[20 nm lithography process|20 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 16 nm process began in 2014. The term "16 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. This technology is set to replaced | + | The '''16 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[20 nm lithography process|20 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 16 nm process began in 2014. The term "16 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. This technology is set to be replaced with [[10 nm lithography process|10 nm process]] in 2017. |
== Industry == | == Industry == | ||
Revision as of 00:36, 29 April 2016
The 16 nm lithography process is a full node semiconductor manufacturing process following the 20 nm process stopgap. Commercial integrated circuit manufacturing using 16 nm process began in 2014. The term "16 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. This technology is set to be replaced with 10 nm process in 2017.
Industry
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| Wafer |
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| Fin Pitch |
| Fin Width |
| Fin Height |
| Contacted Gate Pitch |
| Interconnect Pitch (M1P) |
| SRAM bit cell |
16 nm Microprocessors
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16 nm System on Chips
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16 nm Microarchitectures
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