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Difference between revisions of "150 nm lithography process"
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− | ! colspan="2" | [[TSMC]] | + | ! colspan="2" | [[TSMC]] !! colspan="2" | [[Fujitsu]] |
|- style="text-align: center;" | |- style="text-align: center;" | ||
− | | colspan="2" | | + | | colspan="2" | || colspan="2" | CS-85 |
|- style="text-align: center;" | |- style="text-align: center;" | ||
− | | colspan="2" | 2000 | + | | colspan="2" | 2000 || colspan="2" | 2002 |
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− | ! Value !! [[180 nm]] Δ | + | ! Value !! [[180 nm]] Δ !! Value !! [[180 nm]] Δ |
|- | |- | ||
− | | ? nm || ?x | + | | ? nm || ?x || ? nm || ?x |
|- | |- | ||
− | | ? nm || ?x | + | | ? nm || ?x || ? nm || ?x |
|- | |- | ||
− | | 3.42 µm<sup>2</sup> || 0.74x | + | | 3.42 µm<sup>2</sup> || 0.74x || ? µm<sup>2</sup> || ?x |
{{scrolling table/end}} | {{scrolling table/end}} | ||
Revision as of 01:53, 27 April 2016
The 150 nm lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 180 nm and 130 nm processes. Commercial integrated circuit manufacturing using 55 nm process began in early 2000s. This technology superseded by commercial 130 nm process by 2001.
Industry
Fab |
---|
Process Name |
1st Production |
|
Contacted Gate Pitch |
Interconnect Pitch (M1P) |
SRAM bit cell |
TSMC | Fujitsu | ||
---|---|---|---|
CS-85 | |||
2000 | 2002 | ||
Value | 180 nm Δ | Value | 180 nm Δ |
? nm | ?x | ? nm | ?x |
? nm | ?x | ? nm | ?x |
3.42 µm2 | 0.74x | ? µm2 | ?x |
150 nm Microprocessors
- Cyrix
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