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Difference between revisions of "16 nm lithography process"

(Industry)
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== Industry ==
 
== Industry ==
 
{{scrolling table/top|style=text-align: right; | first=Fab
 
{{scrolling table/top|style=text-align: right; | first=Fab
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|Wafer
 
  | 
 
  | 
 
  |Fin Pitch
 
  |Fin Pitch
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|-
 
|-
 
! colspan="2" | [[TSMC]]
 
! colspan="2" | [[TSMC]]
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|- style="text-align: center;"
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| colspan="2" | 300mm
 
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! Value !! [[20 nm]] Δ  
 
! Value !! [[20 nm]] Δ  

Revision as of 21:43, 26 April 2016

The 16 nm lithography process is a full node semiconductor manufacturing process following the 20 nm process stopgap. Commercial integrated circuit manufacturing using 16 nm process began in 2014. The term "16 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. This technology is set to replaced by 14 nm process (HN) (2014) and 10 nm process (FN) in 2017.

Industry

Fab
Wafer​
 ​
Fin Pitch​
Fin Width​
Fin Height​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell
TSMC
300mm
Value 20 nm Δ
48 nm N/A
 ? nm
 ? nm
90 nm 1.03x
64 nm 1.00x
0.07 µm2 0.55x

16 nm Microprocessors

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16 nm System on Chips

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16 nm Microarchitectures

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