Latest revision as of 15:02, 13 May 2020

Semiconductor lithography processes technology

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The 130 nanometer (130 nm) lithography process is a full node semiconductor manufacturing process following the 150 nm process stopgap. Commercial integrated circuit manufacturing using 130 nm process began in 2001. This technology was replaced by with 110 nm process (HN) in 2003 and 90 nm process (FN) in 2004.

Industry[edit]

Design Rules[edit]

130 nm Microprocessors[edit]

• Ambric
  • Am2000
• AMD
  • Athlon 64
  • Athlon MP
  • Athlon XP
  • Athlon XP-M
  • Geode NX
  • FX
  • Opteron
• Cavium
  • OCTEON
• HAL (Fujitsu)
  • SPARC64 V
• IBM
  • Power4+
  • Power5
• Intel
  • Pentium III
  • Pentium III-M
  • Pentium M
  • Pentium 4 Extreme Edition
• Intrinsity
  • FastMATH
• Loongson
  • Godson 2
• Qualcomm
  • MSM6xxx
• SGI
  • R14000
  • R14000A
• Sun
  • UltraSPARC IIi
  • UltraSPARC III Cu
  • UltraSPARC IIIi

• NUDT
  • FT-64

This list is incomplete; you can help by expanding it.

130 nm programmable logic devices[edit]

• MathStar
  • Builder

This list is incomplete; you can help by expanding it.

130 nm Microarchitectures[edit]

• AMD
  • K8
• ARM
  • ARM7
• IBM
  • z990
• VIA Technologies
  • Nehemiah

This list is incomplete; you can help by expanding it.

References[edit]

• Tyagi, Sunit, et al. "A 130 nm generation logic technology featuring 70 nm transistors, dual Vt transistors and 6 layers of Cu interconnects." Electron Devices Meeting, 2000. IEDM'00. Technical Digest. International. IEEE, 2000.