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Difference between revisions of "240 nm lithography process"
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− | The '''240 nm lithography process''' is was semiconductor manufacturing process following the [[350 nm lithography process|350 nm process]]. Commercial [[integrated circuit]] manufacturing using 240 process began in late 1990s. 240 nm and was phased out and later replaced by [[220 nm]] and [[180 nm]] processes. | + | The '''240 nanometer (240 nm) lithography process''' is was semiconductor manufacturing process following the [[350 nm lithography process|350 nm process]]. Commercial [[integrated circuit]] manufacturing using 240 process began in late 1990s. 240 nm and was phased out and later replaced by [[220 nm]] and [[180 nm]] processes. |
== Industry == | == Industry == | ||
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+ | [[category:lithography]] |
Latest revision as of 05:10, 20 July 2018
The 240 nanometer (240 nm) lithography process is was semiconductor manufacturing process following the 350 nm process. Commercial integrated circuit manufacturing using 240 process began in late 1990s. 240 nm and was phased out and later replaced by 220 nm and 180 nm processes.
Industry[edit]
Fab |
---|
Process Name |
1st Production |
Contacted Gate Pitch |
Interconnect Pitch (M1P) |
Metal Layers |
SRAM bit cell |
Fujitsu |
---|
CS-70 |
1997 |
? nm |
? nm |
5 |
? µm2 |
240 nm Microprocessors[edit]
- HAL (Fujitsu)
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