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Difference between revisions of "1.2 µm lithography process"

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  |Process Name
 
  |Process Name
 
  |1st Production
 
  |1st Production
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|Voltage
 
  | 
 
  | 
  |Contacted Gate Pitch
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  |Gate Length
 
  |Interconnect Pitch (M1P)
 
  |Interconnect Pitch (M1P)
 
  |SRAM bit cell
 
  |SRAM bit cell
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! [[Intel]] !! [[NEC]]
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! [[Intel]] !! [[NEC]]  
 
|- style="text-align: center;"
 
|- style="text-align: center;"
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|- style="text-align: center;"
 
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| 1987 || 1988
 
| 1987 || 1988
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|  ||   
 
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! Value !! Value
 
! Value !! Value
 
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| ? nm || ? nm
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| ? µm || ? µm 
 
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| ? nm || ? nm
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| ? µm || ? µm
 
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| ? µm<sup>2</sup> ||  ? µm<sup>2</sup>
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| ? µm² ||  ? µm²
 
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* MIPS (Fab'ed by [[NEC]])
 
* MIPS (Fab'ed by [[NEC]])
 
** {{mips|R3000}}
 
** {{mips|R3000}}
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* Qualcomm
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** {{qualcomm|MSM}} (prototype)
 
{{expand list}}
 
{{expand list}}
  
[[Category:Lithography]]
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[[category:lithography]]

Latest revision as of 22:04, 20 May 2018

The 1.2 µm lithography process was the semiconductor process technology used by the major semiconductor companies between in the late 1980s. 1 µm was phased out in the early 1990s and was replaced by 1 µm, 800 nm, and 650 nm processes.

Industry[edit]

Fab
Process Name​
1st Production​
Voltage​
 ​
Gate Length​
Interconnect Pitch (M1P)​
SRAM bit cell
Intel NEC
 
1987 1988
 
Value Value
 ? µm  ? µm
 ? µm  ? µm
 ? µm²  ? µm²

1.2 µm Microprocessors[edit]

This list is incomplete; you can help by expanding it.