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Difference between revisions of "3 µm lithography process"

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{{Lithography processes}}
 
{{Lithography processes}}
 
The '''3 μm lithography process''' was the semiconductor process technology used by some semiconductor companies during the mid 1970s to the mid 1980s.
 
The '''3 μm lithography process''' was the semiconductor process technology used by some semiconductor companies during the mid 1970s to the mid 1980s.
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== Industry ==
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{{nodes comp
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<!-- Hitachi -->
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| process 1 fab          = [[Hitachi]]
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| process 1 name        = Hi-CMOS I
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| process 1 date        = 1978
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| process 1 lith        = &nbsp;
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| process 1 immersion    = &nbsp;
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| process 1 exposure    = &nbsp;
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| process 1 wafer type  = Bulk
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| process 1 wafer size  = &nbsp;
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| process 1 transistor  = Planar
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| process 1 volt        = 5 V
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| process 1 layers      = 1
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| process 1 delta from  = N/A
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| process 1 gate len    = 3 µm
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| process 1 gate len Δ  = -
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| process 1 cpp          = &nbsp;
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| process 1 cpp Δ        = -
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| process 1 mmp          = &nbsp;
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| process 1 mmp Δ        = -
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| process 1 sram hp      = &nbsp;
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| process 1 sram hp Δ    = -
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| process 1 sram hd      = 896 µm²
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| process 1 sram hd Δ    = -
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| process 1 sram lv      = &nbsp;
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| process 1 sram lv Δ    = -
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| process 1 dram        = &nbsp;
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| process 1 dram Δ      = -
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<!-- VLSI Technology -->
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| process 2 fab          = [[VLSI Technology]]
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| process 2 name        = &nbsp;
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| process 2 date        = &nbsp;
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| process 2 lith        = &nbsp;
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| process 2 immersion    = &nbsp;
 +
| process 2 exposure    = &nbsp;
 +
| process 2 wafer type  = Bulk
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| process 2 wafer size  = &nbsp;
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| process 2 transistor  = Planar
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| process 2 volt        = 5 V
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| process 2 layers      = 2
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| process 2 delta from  = N/A
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| process 2 gate len    = 3 µm
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| process 2 gate len Δ  = -
 +
| process 2 cpp          = &nbsp;
 +
| process 2 cpp Δ        = -
 +
| process 2 mmp          = &nbsp;
 +
| process 2 mmp Δ        = -
 +
| process 2 sram hp      = &nbsp;
 +
| process 2 sram hp Δ    = -
 +
| process 2 sram hd      = &nbsp;
 +
| process 2 sram hd Δ    = -
 +
| process 2 sram lv      = &nbsp;
 +
| process 2 sram lv Δ    = -
 +
| process 2 dram        = &nbsp;
 +
| process 2 dram Δ      = -
 +
}}
  
 
== 3 μm Microprocessors ==
 
== 3 μm Microprocessors ==
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* National
 
* National
 
** {{national|COPS II}}
 
** {{national|COPS II}}
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* ARM
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** {{armh|ARM1|l=arch}}
 
{{expand list}}
 
{{expand list}}
  
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** {{amd|2901}}
 
** {{amd|2901}}
  
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== References ==
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* Hitachi
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** Sakai, Yoshio, et al. "High packing density, high speed CMOS (Hi-CMOS) device technology." Japanese Journal of Applied Physics 18.S1 (1979): 73.
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** Minato, O., et al. "A Hi-CMOSII 8Kx8 bit static RAM." IEEE Journal of Solid-State Circuits 17.5 (1982): 793-798.
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** Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.
  
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[[category:lithography]]
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{{stub}}
 
−
 
 
−
[[Category:Lithography]]
 

Latest revision as of 22:04, 20 May 2018

basic wafer drawing.svg Semiconductor lithography processes technology
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The 3 μm lithography process was the semiconductor process technology used by some semiconductor companies during the mid 1970s to the mid 1980s.

Industry[edit]

 
Process Name
1st Production
Lithography Lithography
Immersion
Exposure
Wafer Type
Size
Transistor Type
Voltage
Metal Layers
 
Gate Length (Lg)
Contacted Gate Pitch (CPP)
Minimum Metal Pitch (MMP)
SRAM bitcell High-Perf (HP)
High-Density (HD)
Low-Voltage (LV)
DRAM bitcell eDRAM
Hitachi VLSI Technology
Hi-CMOS I  
1978  
   
   
   
Bulk Bulk
   
Planar Planar
5 V 5 V
1 2
Value N/A Value N/A
3 µm N/A 3 µm N/A
   
   
   
896 µm²  
   
   

3 μm Microprocessors[edit]

This list is incomplete; you can help by expanding it.

3 μm Microcontrollers[edit]

3 μm Chips[edit]

References[edit]

  • Hitachi
    • Sakai, Yoshio, et al. "High packing density, high speed CMOS (Hi-CMOS) device technology." Japanese Journal of Applied Physics 18.S1 (1979): 73.
    • Minato, O., et al. "A Hi-CMOSII 8Kx8 bit static RAM." IEEE Journal of Solid-State Circuits 17.5 (1982): 793-798.
    • Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.
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