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Difference between revisions of "3.5 µm lithography process"
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Latest revision as of 06:21, 20 July 2018
The 3.5 μm lithography process was the semiconductor process technology used by some semiconductor companies during the mid 1970s. This process had an effective channel length of roughly 3.5 µm between the source and drain. This process was later superseded by 3 µm, 2 µm, and 1.5 µm processes.
Industry[edit]
Fab |
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Process Name |
1st Production |
Contacted Gate Pitch |
Interconnect Pitch |
Metal Layers |
Technology |
Wafer |
3.5 μm microcontrollers[edit]
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