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Difference between revisions of "1.2 µm lithography process"

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! [[Intel]] !! [[NEC]] !! [[Hitachi]]
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|  ||   || Hi-CMOS III
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|  ||  || 5 V
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! Value !! Value !! Value
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| ? µm  || ? µm || 1.2 µm
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| ? µm  || ? µm
 
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| ? µm  || ? µm || 1.3 µm  
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| ? µm² ||  ? µm² ||  ? µm²  
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== References ==
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[[category:lithography]]
* Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.
 
 
 
[[Category:Lithography]]
 

Latest revision as of 22:04, 20 May 2018

The 1.2 µm lithography process was the semiconductor process technology used by the major semiconductor companies between in the late 1980s. 1 µm was phased out in the early 1990s and was replaced by 1 µm, 800 nm, and 650 nm processes.

Industry[edit]

Fab
Process Name​
1st Production​
Voltage​
 ​
Gate Length​
Interconnect Pitch (M1P)​
SRAM bit cell
Intel NEC
 
1987 1988
 
Value Value
 ? µm  ? µm
 ? µm  ? µm
 ? µm²  ? µm²

1.2 µm Microprocessors[edit]

This list is incomplete; you can help by expanding it.