From WikiChip
Difference between revisions of "90 nm lithography process"
(→Industry) |
(→Industry) |
||
Line 8: | Line 8: | ||
|Type | |Type | ||
|Wafer | |Wafer | ||
+ | |Metal Layers | ||
| | | | ||
|Contacted Gate Pitch | |Contacted Gate Pitch | ||
Line 16: | Line 17: | ||
{{scrolling table/mid}} | {{scrolling table/mid}} | ||
|- | |- | ||
− | ! colspan="2" | [[Intel]] !! colspan="2" | [[TSMC]] !! colspan="2" | [[Samsung]] !! colspan="2" | [[Fujitsu]] || colspan="2" | [[IBM]] / [[Toshiba]] / [[Sony]] / [[AMD]] / [[Chartered]] !! colspan="2" | [[Motorola]] | + | ! colspan="2" | [[Intel]] !! colspan="2" | [[TSMC]] !! colspan="2" | [[Samsung]] !! colspan="2" | [[Fujitsu]] || colspan="2" | [[IBM]] / [[Toshiba]] / [[Sony]] / [[AMD]] / [[Chartered]] !! colspan="2" | [[Motorola]] !! colspan="2" | [[TI]] |
|- style="text-align: center;" | |- style="text-align: center;" | ||
− | | colspan="2" | P1262 || colspan="2" | || colspan="2" | || colspan="2" | CS-100 / CS-101 || colspan="2" | || colspan="2" | HiPerMOS 8 | + | | colspan="2" | P1262 || colspan="2" | || colspan="2" | || colspan="2" | CS-100 / CS-101 || colspan="2" | || colspan="2" | HiPerMOS 8 || colspan="2" | |
|- style="text-align: center;" | |- style="text-align: center;" | ||
− | | colspan="2" | 2002 || colspan="2" | 2003 || colspan="2" | 2003 || colspan="2" | 2004 || colspan="2" | 2003 || colspan="2" | 2004 | + | | colspan="2" | 2002 || colspan="2" | 2003 || colspan="2" | 2003 || colspan="2" | 2004 || colspan="2" | 2003 || colspan="2" | 2004 || colspan="2" | 2005 |
|- style="text-align: center;" | |- style="text-align: center;" | ||
− | | colspan="8" | Bulk || colspan="4" | PDSOI | + | | colspan="8" | Bulk || colspan="4" | PDSOI || colspan="2" | Bulk |
|- style="text-align: center;" | |- style="text-align: center;" | ||
− | | colspan=" | + | | colspan="14" | 300mm |
+ | |- style="text-align: center;" | ||
+ | | colspan="2" | 7 || colspan="2" | || colspan="2" | || colspan="2" | || colspan="2" | || colspan="2" | || colspan="2" | 9 | ||
|- | |- | ||
− | ! Value !! [[130 nm]] Δ !! Value !! [[130 nm]] Δ !! Value !! [[130 nm]] Δ !! Value !! [[130 nm]] Δ !! Value !! [[130 nm]] Δ !! Value !! [[130 nm]] Δ | + | ! Value !! [[130 nm]] Δ !! Value !! [[130 nm]] Δ !! Value !! [[130 nm]] Δ !! Value !! [[130 nm]] Δ !! Value !! [[130 nm]] Δ !! Value !! [[130 nm]] Δ !! Value !! [[130 nm]] Δ |
|- | |- | ||
− | | 260 nm || 0.82x || 240 nm || 0.77x || 245 nm || 0.70x || ? nm || ?x || ? nm || ?x || ? nm || ?x | + | | 260 nm || 0.82x || 240 nm || 0.77x || 245 nm || 0.70x || ? nm || ?x || ? nm || ?x || ? nm || ?x || ? nm || ?x |
|- | |- | ||
− | | 220 nm || 0.63x || 240 nm || 0.71x || 245 nm || 0.70x || ? nm || ?x || ? nm || ?x || ? nm || ?x | + | | 220 nm || 0.63x || 240 nm || 0.71x || 245 nm || 0.70x || ? nm || ?x || ? nm || ?x || ? nm || ?x || ? nm || ?x |
|- | |- | ||
− | | 1.0 µm<sup>2</sup> || 0.50x || 0.999 µm<sup>2</sup> || 0.47x || 0.999 µm<sup>2</sup> || ?x || 1.07 µm<sup>2</sup> || 0.54x || 0.999 µm<sup>2</sup> || ?x || ? µm<sup>2</sup> || ?x | + | | 1.0 µm<sup>2</sup> || 0.50x || 0.999 µm<sup>2</sup> || 0.47x || 0.999 µm<sup>2</sup> || ?x || 1.07 µm<sup>2</sup> || 0.54x || 0.999 µm<sup>2</sup> || ?x || ? µm<sup>2</sup> || ?x || ? µm<sup>2</sup> || ?x |
|- | |- | ||
− | | || || || || || || || || 0.19 µm<sup>2</sup> || ?x || || | + | | || || || || || || || || 0.19 µm<sup>2</sup> || ?x || || || || |
{{scrolling table/end}} | {{scrolling table/end}} | ||
Revision as of 01:40, 27 April 2016
The 90 nm lithography process is a full node semiconductor manufacturing process following the 110 nm process stopgap. Commercial integrated circuit manufacturing using 90 nm process began in 2003. This technology was superseded by the 80 nm process (HN) / 65 nm process (FN) in 2006.
Industry
Fab |
---|
Process Name |
1st Production |
Type |
Wafer |
Metal Layers |
|
Contacted Gate Pitch |
Interconnect Pitch (M1P) |
SRAM bit cell |
DRAM bit cell |
Intel | TSMC | Samsung | Fujitsu | IBM / Toshiba / Sony / AMD / Chartered | Motorola | TI | |||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
P1262 | CS-100 / CS-101 | HiPerMOS 8 | |||||||||||
2002 | 2003 | 2003 | 2004 | 2003 | 2004 | 2005 | |||||||
Bulk | PDSOI | Bulk | |||||||||||
300mm | |||||||||||||
7 | 9 | ||||||||||||
Value | 130 nm Δ | Value | 130 nm Δ | Value | 130 nm Δ | Value | 130 nm Δ | Value | 130 nm Δ | Value | 130 nm Δ | Value | 130 nm Δ |
260 nm | 0.82x | 240 nm | 0.77x | 245 nm | 0.70x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x |
220 nm | 0.63x | 240 nm | 0.71x | 245 nm | 0.70x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x |
1.0 µm2 | 0.50x | 0.999 µm2 | 0.47x | 0.999 µm2 | ?x | 1.07 µm2 | 0.54x | 0.999 µm2 | ?x | ? µm2 | ?x | ? µm2 | ?x |
0.19 µm2 | ?x |
90 nm Microprocessors
This list is incomplete; you can help by expanding it.
90 nm System on Chips
This list is incomplete; you can help by expanding it.
90 nm Microarchitectures
This list is incomplete; you can help by expanding it.