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Difference between revisions of "150 nm lithography process"
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− | The '''150 nm lithography process''' is a [[technology node#half node|half-node]] semiconductor manufacturing process used as a stopgap between the [[180 nm lithography process|180 nm]] and [[130 nm lithography process|130 nm]] processes. Commercial [[integrated circuit]] manufacturing using 55 nm process began in early 2000s. This technology superseded by commercial [[130 nm | + | The '''150 nm lithography process''' is a [[technology node#half node|half-node]] semiconductor manufacturing process used as a stopgap between the [[180 nm lithography process|180 nm]] and [[130 nm lithography process|130 nm]] processes. Commercial [[integrated circuit]] manufacturing using 55 nm process began in early 2000s. This technology superseded by commercial [[130 nm]], [[110 nm]], and [[90 nm]] processes. |
== Industry == | == Industry == |
Revision as of 01:59, 27 April 2016
The 150 nm lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 180 nm and 130 nm processes. Commercial integrated circuit manufacturing using 55 nm process began in early 2000s. This technology superseded by commercial 130 nm, 110 nm, and 90 nm processes.
Industry
Fab |
---|
Process Name |
1st Production |
Metal Layers |
|
Contacted Gate Pitch |
Interconnect Pitch (M1P) |
SRAM bit cell |
TSMC | Fujitsu | ||
---|---|---|---|
CS-85 | |||
2000 | 2002 | ||
6 | |||
Value | 180 nm Δ | Value | 180 nm Δ |
? nm | ?x | ? nm | ?x |
? nm | ?x | ? nm | ?x |
3.42 µm2 | 0.74x | ? µm2 | ?x |
150 nm Microprocessors
- Cyrix
- HAL (Fujitsu)
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