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Difference between revisions of "5 µm lithography process"
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− | HP's ''NMOS II'' process as the name implied was a second generation nMOD process which was a shrink of their previous generation [[7 µm]] nMOS also developed by [[HP]]'s Loveland Division. The shrink was done in the hope they could double the speed while doubling density. Loveland went on on to create a third and final process, the ''NMOS III'' using a [[1.5 µm process]]. | + | HP's ''NMOS II'' process as the name implied was a second generation nMOD process which was a shrink of their previous generation [[7 µm]] nMOS also developed by [[HP]]'s Loveland Division. The shrink was done in the hope they could double the speed while doubling density. Loveland went on on to create a third and final process, the ''NMOS III'' using a [[1.5 µm process]]. While they succeeded in doubling the density and more than ten-folding the speed, the complexity of the chip still required them to fabricate it on 3 seperate dies and package them together. |
{{scrolling table/top|style=text-align: right; | first=Fab | {{scrolling table/top|style=text-align: right; | first=Fab | ||
|Process Name | |Process Name |
Revision as of 08:39, 26 April 2016
The 5μm lithography process was the semiconductor process technology used by some semiconductor companies during the mid 1970s. This process was later superseded by 3 µm, 2 µm, and 1.5 µm processes.
Industry
HP's NMOS II process as the name implied was a second generation nMOD process which was a shrink of their previous generation 7 µm nMOS also developed by HP's Loveland Division. The shrink was done in the hope they could double the speed while doubling density. Loveland went on on to create a third and final process, the NMOS III using a 1.5 µm process. While they succeeded in doubling the density and more than ten-folding the speed, the complexity of the chip still required them to fabricate it on 3 seperate dies and package them together.
Fab |
---|
Process Name |
1st Production |
Contacted Gate Pitch |
Interconnect Pitch |
Metal Layers |
Technology |
Wafer |
HP |
---|
NMOS II |
1973 |
? nm |
? nm |
nMOS |
51 mm |
5µm Microprocessors
- HP
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