From WikiChip
110 nm lithography process
Revision as of 05:57, 20 July 2018 by Oleg3280 (talk | contribs) (category:lithography)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)

The 110 nanometer (110 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 130 nm and 90 nm processes. 110 nm process was used in the early 2000s.

Industry[edit]

Fab
Process Name​
1st Production​
Type​
 ​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell
TSMC UMC On Semi
SP110
2003  
Bulk
Value 130 nm Δ Value 130 nm Δ Value 130 nm Δ
 ? nm  ?x  ? nm  ?x  ? nm  ?x
 ? nm  ?x 320 nm  ?x  ? nm  ?x
 ? µm2  ?x  ? µm2  ?x  ? µm2  ?x

110 nm Microprocessors[edit]

This list is incomplete; you can help by expanding it.