Semiconductor & Computer Engineering
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3 µm lithography process
Semiconductor lithography processes technology
The 3 μm lithography process was the semiconductor process technology used by some semiconductor companies during the mid 1970s to the mid 1980s.
Industry
| Process Name | |
|---|---|
| 1st Production | |
| Lithography | Lithography |
| Immersion | |
| Exposure | |
| Wafer | Type |
| Size | |
| Transistor | Type |
| Voltage | |
| Metal Layers | |
| Gate Length (Lg) | |
| Contacted Gate Pitch (CPP) | |
| Minimum Metal Pitch (MMP) | |
| SRAM bitcell | High-Perf (HP) |
| High-Density (HD) | |
| Low-Voltage (LV) | |
| DRAM bitcell | eDRAM |
| Hitachi | |
|---|---|
| Hi-CMOS I | |
| 1978 | |
| Bulk | |
| Planar | |
| 5 V | |
| 1 | |
| Value | N/A |
| 3 µm² | N/A |
| 896 µm² | |
3 μm Microprocessors
- Intel
- Novix NC4016
- Dec
- Siemens
- Fairchild
- Toshiba
- National
- ARM
This list is incomplete; you can help by expanding it.
3 μm Microcontrollers
3 μm Chips
References
- Hitachi
- Sakai, Yoshio, et al. "High packing density, high speed CMOS (Hi-CMOS) device technology." Japanese Journal of Applied Physics 18.S1 (1979): 73.
- Minato, O., et al. "A Hi-CMOSII 8Kx8 bit static RAM." IEEE Journal of Solid-State Circuits 17.5 (1982): 793-798.
- Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.