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{{lithography processes}}
 
{{lithography processes}}
The '''110 nm lithography process''' is a [[technology node#half node|half-node]] semiconductor manufacturing process used as a stopgap between the [[130 nm lithography process|130 nm]] and [[90 nm lithography process|90 nm]] processes. 110 nm process was used in the early 2000s.
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The '''110 nanometer (110 nm) lithography process''' is a [[technology node#half node|half-node]] semiconductor manufacturing process used as a stopgap between the [[130 nm lithography process|130 nm]] and [[90 nm lithography process|90 nm]] processes. 110 nm process was used in the early 2000s.
  
 
== Industry ==
 
== Industry ==

Revision as of 03:54, 24 May 2016

The 110 nanometer (110 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 130 nm and 90 nm processes. 110 nm process was used in the early 2000s.

Industry

Fab
Process Name​
1st Production​
Type​
 ​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell
TSMC UMC On Semi
SP110
2003  
Bulk
Value 130 nm Δ Value 130 nm Δ Value 130 nm Δ
 ? nm  ?x  ? nm  ?x  ? nm  ?x
 ? nm  ?x 320 nm  ?x  ? nm  ?x
 ? µm2  ?x  ? µm2  ?x  ? µm2  ?x

110 nm Microprocessors

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