Semiconductor & Computer Engineering
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Difference between revisions of "8 µm lithography process"
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| − | The '''8 µm lithography process''' was the semiconductor process technology used by some semiconductor companies during the late 1960s through the early 1970s. The typical [[wafer]] size for this process at companies such as [[Fairchild]] and [[TI]] were 2 inch (51 mm). | + | The '''8 µm lithography process''' was the semiconductor process technology used by some semiconductor companies during the late 1960s through the early 1970s. The typical [[wafer]] size for this process at companies such as [[Fairchild]] and [[TI]] were 2 inch (51 mm). This process was later superseded by [[6 µm]], [[5 µm]], and [[3 µm]] processes. |
== Industry == | == Industry == | ||
Revision as of 05:13, 26 April 2016
Semiconductor lithography processes technology
The 8 µm lithography process was the semiconductor process technology used by some semiconductor companies during the late 1960s through the early 1970s. The typical wafer size for this process at companies such as Fairchild and TI were 2 inch (51 mm). This process was later superseded by 6 µm, 5 µm, and 3 µm processes.
Industry
| Fab |
|---|
| Process Name |
| 1st Production |
| Contacted Gate Pitch |
| Interconnect Pitch |
| Metal Layers |
| Technology |
| Intel | TI | Fairchild | MOS Technology |
|---|---|---|---|
| 1970 | 1969 | 1969 | 1974 |
| ? nm | ? nm | ? nm | ? nm |
| ? nm | ? nm | ? nm | ? nm |
| 2 | 2 | 2 | |
| pMOS | pMOS | pMOS | depletion-mode nMOS |
Microprocessors
8 µm Chips
- Intel
- 1103, 1Kb DRAM, worlds first commercial DRAM
 |
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