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- |technology=pMOS * [[pMOS]] transistors5 KB (748 words) - 21:37, 21 November 2021
- | PMOS || PMOS || CMOS || PMOS || PMOS ||2 KB (177 words) - 23:04, 20 May 2018
- | nMOS/pMOS || depletion-mode nMOS || nMOS/pMOS/CMOS ||1 KB (119 words) - 23:04, 20 May 2018
- | fab 3 xtor.tech = pMOS8 KB (969 words) - 12:31, 22 February 2019
- | fab 1 xtor.tech = nMOS, pMOS | fab 2 xtor.tech = pMOS5 KB (632 words) - 23:04, 20 May 2018
- | tech = pMOS2 KB (291 words) - 23:48, 10 July 2017
- ...XrgKBKkC&lpg=PA401&ots=i6F1IL5YAO&pg=PA402 Page 402]</ref> The HMCS-4 used pMOS technology and was architecturally compatible with the [[Intel 4004]]. The1 KB (157 words) - 01:34, 24 December 2015
- | tech = pMOS2 KB (266 words) - 00:54, 19 May 2016
- | technology = pMOS ...icroprocessor]] designed by [[AMI]] in 1975. The chip was fabricated using pMOS technology.<ref>Jack Belzer, Albert G. Holzman, Allen Kent. (Jul 1, 1978).1 KB (148 words) - 16:10, 13 December 2017
- * pull-up network (PUN) - a set of [[PMOS]] transistors connected between V<sub>cc</sub> and the output line1 KB (221 words) - 18:07, 26 November 2018
- ...poses they are physically equivalent and can be used interchangeably. A '''pMOS transistor''' is built with an n-type body with two regions of p-type semic Both pMOS and nMOS have a controlling gate. The [[controlling gate]], as the name imp8 KB (1,362 words) - 23:38, 17 November 2015
- ...VDD but not GND. When the input is HIGH, the nMOS transistor is on and the pMOS transistor is off yielding an output that is connected to GND. CMOS inverte ...e related by \( i_L = \frac{C_Ldv_O}{dt} \). The energy dissipation in the pMOS device can be expressed as the output switches from LOW to HIGH,6 KB (983 words) - 04:50, 8 November 2015
- | tech = pMOS ...l into the 90s. Two types of each component were manufactured, one using [[pMOS]] for low cost and another using [[CMOS]] where lower power was more desire4 KB (400 words) - 19:05, 24 May 2016
- | tech = pMOS ...ons with a 10 microsecond instruction cycle. The chips come in [[nMOS]], [[pMOS]], and [[CMOS]] versions.4 KB (462 words) - 19:14, 13 October 2019
- | tech = pMOS3 KB (301 words) - 19:23, 13 October 2019
- | tech = pMOS ...nally called, was released to the market in 1976. It was manufactured in [[pMOS]] technology. A year later, National introduced the {{national|cops ii|COPS2 KB (274 words) - 18:29, 5 February 2016
- ...in the COPS II were made in [[nMOS]] and [[CMOS]] technology instead of [[pMOS]] as used in COPS I. The COPS II obsoleted the COPS I family soon after rel6 KB (685 words) - 22:49, 5 February 2016
- | tech = pMOS3 KB (397 words) - 16:54, 28 June 2019
- | tech = pMOS2 KB (247 words) - 00:32, 19 May 2016
- ...tional semiconductor]] and introduced in 1974. The chips were made using [[PMOS]] technology. Units could be combined to implement systems with 8 to 32-bit1 KB (137 words) - 12:37, 21 July 2018
- ...tional semiconductor]] and introduced in 1973. The chips were made using [[PMOS]] technology. Like the {{national|IMP-8}}, the IMP-16 was designed using 41 KB (172 words) - 19:22, 5 November 2015
- ...eveloped by [[ITT Semiconductors]]. The microcontrollers were made using [[PMOS]] technology. Due to their relatively lower cost compared to most other gen740 bytes (94 words) - 20:36, 4 February 2016
- | tech = pMOS ...[[Mitsubishi]] and introduce in March of 1978. Originally designed using [[pMOS]] technology, a second chip '''MELPS 41''' (and later MELPS 42) was designe4 KB (388 words) - 19:48, 6 February 2016
- | tech = pMOS2 KB (182 words) - 06:47, 22 January 2016
- | tech = pMOS2 KB (276 words) - 18:29, 29 January 2016
- ...chips designed by [[National Semiconductor]]. The chips were made using [[PMOS]] technology, most designed for 9V battery, had an a very limited set of ma2 KB (231 words) - 05:26, 10 November 2015
- ...plementary [[mosfet|MOS]] [[transistor]]s - [[pmos transistor|pMOS]] and [[pMOS transistor|nMOS]]. CMOS is the dominant technology used for [[VLSI]] and [ ...n V<sub>DD</sub> - V<sub>t</sub> we get a degraded 1 output. Likewise with pMOS, we can pull no lower than V<sub>t</sub> - a degraded 0 output. By combinin7 KB (1,159 words) - 21:01, 8 February 2019
- ...ing the discharge current to drop. Conversely when the input is LOW, the [[PMOS transistor]] is conducting becoming the base current for the Q<sub>1</sub>2 KB (329 words) - 08:33, 16 January 2019
- ...w additional optimizations by removing redundant sets of [[pMOS transistor|pMOS]] and [[nMOS transistor|nMOS]] pairs of [[transistor]]s.903 bytes (132 words) - 00:34, 8 December 2015
- *** [[pmos logic|p-type metal–oxide–semiconductor logic]] (pMOS)1 KB (145 words) - 00:40, 26 December 2015
- | tech = pMOS ...Texas Instruments]] in the early 1970s. Originally made using [[pMOS logic|pMOS]] technology, TI later expended the family into [[nMOS logic|nMOS]] and [[C6 KB (711 words) - 04:39, 26 April 2017
- | tech = pMOS4 KB (433 words) - 22:40, 27 June 2019
- | tech = pMOS2 KB (185 words) - 00:33, 19 May 2016
- | tech = pMOS3 KB (359 words) - 17:26, 19 May 2016
- | tech = pMOS1 KB (160 words) - 03:43, 19 January 2016
- | tech = pMOS2 KB (316 words) - 00:54, 19 May 2016
- | tech = pMOS2 KB (183 words) - 05:49, 20 January 2016
- | tech = pMOS2 KB (198 words) - 07:26, 20 January 2016
- | tech = pMOS2 KB (288 words) - 16:58, 8 November 2016
- | tech = pMOS1 KB (149 words) - 18:28, 20 January 2016
- | tech = pMOS2 KB (258 words) - 05:24, 1 August 2018
- | tech = pMOS2 KB (280 words) - 01:00, 19 May 2016
- | tech = pMOS2 KB (290 words) - 01:00, 19 May 2016
- | tech = pMOS1 KB (144 words) - 08:59, 20 January 2016
- | tech = pMOS1 KB (159 words) - 09:30, 20 January 2016
- | tech = pMOS2 KB (180 words) - 11:43, 22 January 2016
- | tech = pMOS1 KB (170 words) - 22:35, 20 January 2016
- | tech = pMOS1 KB (168 words) - 22:58, 20 January 2016
- | tech = pMOS1 KB (159 words) - 22:58, 20 January 2016
- | tech = pMOS2 KB (184 words) - 13:17, 22 January 2016
- | tech = pMOS1 KB (160 words) - 00:35, 21 January 2016
- | tech = pMOS2 KB (244 words) - 06:13, 1 August 2018
- | tech = pMOS1 KB (171 words) - 13:22, 22 January 2016
- | tech = pMOS1 KB (184 words) - 13:22, 22 January 2016
- | tech = pMOS2 KB (219 words) - 01:00, 19 May 2016
- | tech = pMOS2 KB (177 words) - 15:36, 12 May 2016
- | tech = pMOS | {{\|SM-1}} || pMOS || 882 B || 48x4 b ||2 KB (260 words) - 19:14, 8 February 2016
- | tech = pMOS3 KB (382 words) - 17:58, 19 May 2016
- |technology=pMOS2 KB (254 words) - 19:24, 23 March 2022
- | technology = pMOS1 KB (151 words) - 16:24, 13 December 2017
- ...14 nm became [[Intel]]'s 2nd generation FinFET transistors. Intel uses TiN pMOS / TiAlN nMOS as work function metals. Intel makes use of 193 nm immersion l ...alFoundries first generation of FinFET-based transistors. Samsung uses TiN pMOS / TiAIC nMOS as work function metals. Samsung node has gone through a numbe17 KB (2,243 words) - 19:32, 25 May 2023
- | N/PMOS Idsat/Ioff (mA/µm) || 1.08/0.91 @ 0.75 V, 100 nA/µm || 0.71/0.59 @0.75 V,7 KB (891 words) - 09:52, 25 November 2020
- ...the square box) labeled T1, T2, and T3. The effective size of the shared [[PMOS]] is set during [[post-silicon]] production testing by enabling and disabli84 KB (13,075 words) - 00:54, 29 December 2020
- [[File:intel 14nm+ (pmos).png|400px]]38 KB (5,431 words) - 10:41, 8 April 2024
- ...er [[FinFET devices]]. We believe TSMC is employing a SiGe channel for the pMOS devices. It has been suggested that the channel has 37% Ge composition. TSM11 KB (1,662 words) - 02:58, 2 October 2022
- ** [[Allows value::pMOS]]466 bytes (57 words) - 19:57, 18 February 2020
- [[File:intel 14nm++ (pmos).png|400px]]30 KB (4,192 words) - 13:48, 10 December 2023
- | technology = <!-- technology (e.g. CMOS, pMOS, nMOS, etc..) -->4 KB (473 words) - 09:26, 3 December 2019
- {{intel proc tech |year=1972 |name=PMOS I |mlayers=1 |node=10 µm13 KB (1,998 words) - 03:56, 4 March 2022
- ...wer dissipation in favor of higher density. In this configuration, the two PMOS transistors are replaced with denser high resistance resistors.6 KB (920 words) - 03:14, 30 December 2019
- Typically, the area between the end of the nMOS and pMOS devices is used as the gate contact hit location. In an effort to reduce ce4 KB (600 words) - 00:24, 21 June 2022
- ...ucing the dead space region between the end of the nMOS and the end of the pMOS devices. Traditionally, the gate is extended from the nMOS/pMOS device outward over the inactive isolation region. The gate via is then dro3 KB (354 words) - 23:31, 19 June 2022