• national semiconductor/imp-16
  ...semiconductor]] and introduced in 1973. The chips were made using [[PMOS]] technology. Like the {{national|IMP-8}}, the IMP-16 was designed using 4 {{national|IM [[Category:National Semiconductor microprocessors]]
  1 KB (172 words) - 19:22, 5 November 2015
• fairchild/4700
  | developer = Fairchild Semiconductor | manufacturer = Fairchild Semiconductor
  3 KB (283 words) - 17:18, 12 December 2016
• national semiconductor/mm5700
  {{national title|MM5700}}{{confuse|national semiconductor/maps|l1=National MAPS (MM570X Series)}} ...designed by [[National Semiconductor]]. The chips were made using [[PMOS]] technology, most designed for 9V battery, had an a very limited set of math operations
  2 KB (231 words) - 05:26, 10 November 2015
• 7400 series
  | desc 3 = Technology Indicator * '''Technology indicator:'''
  7 KB (851 words) - 20:53, 29 July 2021
• logic family
  .... A '''logic family''' is a collection of devices that share the same core technology used to implement [[integrated circuit]]s logic (e.g. [[CMOS]] vs [[Bipolar ** [[metal-oxide-semiconductor field-effect transistor]] (MOSFET)
  1 KB (145 words) - 00:40, 26 December 2015
• general instrument
  ...microelectronics division as a wholly owned subsidiary called [[Microchip Technology]].
  1 KB (102 words) - 03:18, 17 February 2016
• Property:instance of
  ** [[allows value::semiconductor company]] ** [[allows value::technology]]
  2 KB (189 words) - 13:28, 11 August 2018
• myson technology
  {{title|Myson Technology}} | name = Myson Technology
  1,010 bytes (100 words) - 08:15, 28 April 2016
• technology node
  {{title|Technology Node}}{{lithography processes}} ...0 nm]] refer purely to a specific generation of chips made in a particular technology. It does not correspond to any gate length or half pitch. Nevertheless, th
  8 KB (1,225 words) - 13:48, 14 December 2022
• 28 nm lithography process
  ...integrated circuit]] manufacturing using 28 nm process began in 2011. This technology superseded by commercial [[22 nm lithography process|22 nm process]]. ...], [[NEC]], [[STMicroelectronics]], [[Infineon Technologies]], [[Chartered Semiconductor Manufacturing]], [[Renasas]]</info>
  6 KB (711 words) - 17:01, 26 March 2019
• 32 nm lithography process
  ...integrated circuit]] manufacturing using 32 nm process began in 2010. This technology was superseded by the [[28 nm lithography process|28 nm process]] (HN) / [[ ...tion between [[IBM]], [[Samsung]], [[Freescale]], [[Toshiba]], [[Chartered Semiconductor Manufacturing]], [[Infineon Technologies ]]</info>
  10 KB (1,090 words) - 19:14, 8 July 2021
• 14 nm lithography process
  ...nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. The 14 nm node was introduced in ...process should cater to the products that will make use of the underlying technology. The composition of the actual integrated circuit also varies by manufactur
  17 KB (2,243 words) - 19:32, 25 May 2023
• 45 nm lithography process
  ...integrated circuit]] manufacturing using 45 nm process began in 2007. This technology was superseded by the [[40 nm lithography process|40 nm process]] (HN) / [[ * Mistry, Kaizad, et al. "A 45nm logic technology with high-k+ metal gate transistors, strained silicon, 9 Cu interconnect la
  5 KB (602 words) - 05:51, 20 July 2018
• 16 µm lithography process
  ...ithography process''' was the [[semiconductor process]] technology used by semiconductor companies during the late 1960s. This process had an effective channel leng
  502 bytes (66 words) - 23:04, 20 May 2018
• 20 µm lithography process
  ...ithography process''' was the [[semiconductor process]] technology used by semiconductor companies during the mid to late 1960s. This process had an effective chann |Technology
  902 bytes (119 words) - 23:04, 20 May 2018
• 50 µm lithography process
  ...aphy process''' was the [[semiconductor process]] technology used by early semiconductor companies during the mid 1960s. This process had an effective channel (Alu)
  524 bytes (70 words) - 23:04, 20 May 2018
• 22 nm lithography process
  ...g using 22 nm process began in 2008 for memory and 2012 for [[MPU]]s. This technology was replaced by with [[20 nm lithography process|20 nm process]] (HN) in 20 * [[:File:22FFL-2017.pdf|Intel's 22FFL technology]]
  7 KB (891 words) - 09:52, 25 November 2020
• 16 nm lithography process
  ...ain size and its technology, as opposed to gate length or half pitch. This technology is set to be replaced with [[10 nm lithography process|10 nm process]] in 2 ...2016 TSMC announced a "12nm" process (e.g. 12FFC<info>12nm FinFET Compact Technology</info>) which uses the similar design rules as the 16nm node but a tighter
  4 KB (580 words) - 17:00, 26 March 2019
• 20 nm lithography process
  ...integrated circuit]] manufacturing using 20 nm process began in 2014. This technology superseded by commercial [[16 nm lithography process|16 nm process]]. <tr><th>Technology</th><td>20 nm HK-MG</td></tr>
  4 KB (483 words) - 23:04, 20 May 2018
• 40 nm lithography process
  ...ss began in 2008 by leading semiconductor companies such as [[TSMC]]. This technology superseded by commercial [[32 nm lithography process|32 nm process]] by 201
  2 KB (182 words) - 03:11, 17 August 2023

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