Revision as of 11:36, 11 May 2017

This article details details Intel's Semiconductor Process Technology history. The table below shows the history of Intel's process scaling. Values were taken from various Intel documents including IDF presentations, ISSCC papers, and IEDM papers. Note that while a great deal of effort was put into ensuring the accuracy of the values; however some numbers vary to a small degree between Intel's own documents and therefore discrepancies may exist. SRAM bitcell areas refer to a high-density 6T bitcell with the exception of the very first few processes where smaller cell designs were used.

Timeline

1 µm vs 500 nm yield

Ramps from 1 µm to 65 nm

SRAM test chips from 130 nm to 45 nm

Intel's fab roadmap from 2003. Intel had to switch to FinFET after gate length scaling stalled due to subpar electrical characteristics.

65 nm to 32 nm SRAM scaling

90 nm to 32 nm

Year	Process	Node	MLayers	µarchs	Transistor	Attributes
	CHMOS I	3 µm	1	8085, 8086, 8088, 80186			Tox	70 nm	Gate Dielectric
							Vdd	5 V	SRAM	1120 µm²
							Lg	3.0 µm
							CPP	7 µm	MMP	11 µm
	CHMOS II	2 µm	1				Tox	40 nm	Gate Dielectric
							Vdd	5 V	SRAM	1740 µm²
							Lg	2.0 µm
							CPP	5.6 µm	MMP	8 µm
1982	P646 (CHMOS III)	1.5 µm	1	80286, 80386			Tox	25 nm	Gate Dielectric	Si2N2O
							Vdd	5 V	SRAM	951.7 µm²
							Lg	1.5 µm
							CPP	4.0 µm	MMP	6.4 µm
1987	P648	1.0 µm	2	80486			Tox		Gate Dielectric
							Vdd	5 V	SRAM
							Lg	1,000 µm
							CPP		MMP
1989	P650	0.8 µm	3	80486			Tox	15 nm	Gate Dielectric
							Vdd	5 V	SRAM	111 µm²
							Lg	800 µm
							CPP	1.7 µm	MMP	2 µm
1991		0.6 µm	4	80486, P5			Tox	8 nm	Gate Dielectric
							Vdd	3.3 V	SRAM
							Lg	600 µm
							CPP		MMP	1.4 µm
1993	P852	0.5 µm	4	P5			Lg	500 nm
							Tox	8.0 nm	Gate Dielectric
							Vdd	3.3 V
1995	P854	0.35 µm	4	P6			Tox	6 nm	Gate Dielectric	SiO2
							Vdd	2.5 V	SRAM	20.5 µm²
							Lg	350 nm
							CPP	920 nm	MMP	880 nm
1997	P856	0.25 µm	5	P6			Tox	4.08 nm	Gate Dielectric	SiO2
							Vdd	1.8 V	SRAM	10.26 µm²
							Lg	200 nm
							CPP	500 nm	MMP	640 nm
1998	P856.5	0.25 µm	5	P6			Tox	4.08 nm	Gate Dielectric	SiO2
							Vdd	1.8 V	SRAM	9.26 µm²
							Lg	200 nm
							CPP	475 nm	MMP	608 nm
1999	P858	0.18 µm	6	NetBurst			Tox	2.0 nm	Gate Dielectric	SiO2
							Vdd	1.6 V	SRAM	5.59 µm²
							Lg	130 nm
							CPP	480 nm	MMP	500 nm
2001	P860	0.13 µm	6	Pentium M			Tox	1.4 nm	Gate Dielectric	SiO2
							Vdd	1.4 V	SRAM	2.45 µm²
							Lg	70 nm
							CPP	336 nm	MMP	345 nm
2003	P1262	90 nm	7	Pentium M			Tox	1.2 nm	Gate Dielectric	SiO2
							Vdd	1.2 V	SRAM	1.00 µm²
							Lg	50 nm
							CPP	260 nm	MMP	220 nm
2005	P1264	65 nm	8	Core, Modified Pentium M			Tox		Gate Dielectric	SiO2
							Vdd		SRAM	0.570 µm²
							Lg	35 nm
							CPP	220 nm	MMP	210 nm
2007	P1266	45 nm	9	Penryn, Nehalem			Tox		Gate Dielectric	High-κ
							Vdd		SRAM	0.346 µm²
							Lg	25 nm
							CPP	160 nm	MMP	180 nm
2009	P1268	32 nm	10	Westmere, Sandy Bridge			Tox		Gate Dielectric	High-κ
							Vdd		SRAM	0.148 µm²
							Lg	30 nm
							CPP	112.5 nm	MMP	112.5 nm
2011	P1270	22 nm	11	Ivy Bridge, Haswell			Tox		Gate Dielectric	High-κ
							Vdd		SRAM	0.092 µm²
							Lg	26 nm
							CPP	90 nm	MMP	80 nm
2014	P1272	14 nm	11	Broadwell, Skylake, Kaby Lake, Coffee Lake			Tox		Gate Dielectric	High-κ
							Vdd		SRAM	0.0499 µm²
							Lg	20 nm
							CPP	70 nm	MMP	52 nm
2017	P1274	10 nm		Cannonlake, Icelake, Tigerlake			Tox		Gate Dielectric	High-κ
							Vdd		SRAM	0.0312 µm²
							Lg	18 nm ?
							CPP	54 nm	MMP	36 nm
2019	P1276	7 nm
2022	P1278	5 nm