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  • [[File:cmos comp topo.gif|right]] ...s: '''precharge''' and '''evaluation'''. When the clock is LOW, the output node is precharged to V<sub>DD</sub> (note that no current flows because the [[n
    7 KB (1,159 words) - 21:01, 8 February 2019
  • ...meter (28 nm) lithography process''' is a [[technology node#half node|half-node]] semiconductor manufacturing process used as a stopgap between the [[32 nm {{nodes comp
    6 KB (711 words) - 17:01, 26 March 2019
  • ...'''32 nanometer (32 nm) lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[40 nm lithography pro TSMC cancelled its planned 32nm node process. Intel's 32 nm process became the first process to introduce the [[
    10 KB (1,090 words) - 19:14, 8 July 2021
  • ...ize and its technology, as opposed to gate length or half pitch. The 14 nm node was introduced in 2014/2015 and has been replaced by the [[10 nm process]]. {{finfet nodes comp
    17 KB (2,243 words) - 19:32, 25 May 2023
  • ...'''22 nanometer (22 nm) lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[28 nm lithography pro {{finfet nodes comp
    7 KB (891 words) - 09:52, 25 November 2020
  • ...'''16 nanometer (16 nm) lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[20 nm lithography pro {{finfet nodes comp
    4 KB (580 words) - 17:00, 26 March 2019
  • ...meter (20 nm) lithography process''' is a [[technology node#half node|half-node]] semiconductor manufacturing process used as a stopgap between the [[22 nm {{nodes comp
    4 KB (483 words) - 23:04, 20 May 2018
  • ...its technology, as opposed to [[gate length]] or [[half pitch]]. The 10 nm node is currently being introduced and is set to get replaced by the [[7 nm proc {{10 nm comp
    14 KB (1,903 words) - 06:52, 17 February 2023
  • ...dge foundries by 2020/21 timeframe where it will be replaced by the [[5 nm node]]. In terms of raw cell-level density, the 7-nanometer node features silicon densities between 90-102 million [[transistors per square
    13 KB (1,941 words) - 02:40, 5 November 2022
  • ...ufacturing process following the [[7 nm lithography process|7 nm process]] node. Commercial [[integrated circuit]] manufacturing using 5 nm process is set ...Note that Intel [[7 nm process]] is comparable to the foundry 5-nanometer node.
    11 KB (1,662 words) - 02:58, 2 October 2022
  • ...td style="width: 50px;">'''3'''</td><td>First generation Zen with enhanced node (Zen+) for Mobile and Desktop APUs (2019); Second generation Zen (Zen 2)(20 ...n 14 nm). The move to 14 nm will bring along related benefits of a smaller node such as reduced heat, reduced power consumption, and higher density for ide
    79 KB (12,095 words) - 15:27, 9 June 2023
  • ...ufacturing process following the [[5 nm lithography process|5 nm process]] node. Commercial [[integrated circuit]] manufacturing using 3 nm process is set {{finfet nodes comp
    5 KB (558 words) - 19:04, 29 December 2023
  • ** Gold and up also have Node Controller Support and offer Integrated Omni-Path Fabric Interface options {{comp table start}}
    7 KB (934 words) - 14:21, 10 June 2018
  • ...being offered (see [[#Scalability|§ Scalability]]). High-end models have node controller support allowing for even higher way configuration (e.g., 32-way ...dent node on the mesh as well and they now behave identically to any other node/core in the network. This means that in addition to the performance increas
    52 KB (7,651 words) - 00:59, 6 July 2022
  • | desc 3 = '''[[Technology Node]]'''<br><table><tr><td style="width: 50px;">'''P'''</td><td>[[45 nm process {{comp table start}}
    6 KB (795 words) - 20:23, 31 October 2017
  • ...being offered (see [[#Scalability|§ Scalability]]). High-end models have node controller support allowing for even higher way configuration (e.g., 32-way {{comp table start}}
    32 KB (4,535 words) - 05:44, 9 October 2022
  • ** Gold and up also have Node Controller Support and offer Integrated Omni-Path Fabric Interface options {{comp table start}}
    9 KB (1,291 words) - 13:48, 27 February 2020
  • ...or the same performance compared to the {{\\|Cortex-A75}} on the [[10 nm]] node. This is achieved through a combination of both microarchitectural improvem {{comp table start}}
    14 KB (2,183 words) - 17:15, 17 October 2020
  • ...ith performance, power and area numbers mainly targeting the [[5-nanometer node]]. ...wer efficiency improvement of moving from the [[N7|7 nm]] to the [[N5|5 nm node]]. Likewise, Arm says the A78 can achieve the same level of performance (30
    21 KB (3,067 words) - 09:25, 31 March 2022
  • ...titioned into two equal NUMA segments. When enabled, the cores in one NUMA node only utilize the LLC and memory allocated to that segment. The effect is th {{comp table start}}
    16 KB (2,497 words) - 13:30, 15 May 2020

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