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  • ...would need to create a more complex integrated circuit as using [[discrete logic]] would not meet their desired specifications. After having the basic archi
    6 KB (933 words) - 16:32, 13 December 2017
  • {{title|Arithmetic Logic Unit (ALU)}} ...ALU''') is digital circuit that incorporates the functionality of both a [[logic unit]] and an [[arithmetic unit]], i.e. a unit capable of performing both [
    597 bytes (91 words) - 20:50, 21 April 2020
  • ...ed the 1201 idea entirely and went with a discrete [[transistor-transistor logic|TTL]] instead.
    3 KB (382 words) - 17:58, 19 May 2016
  • ...ring process]] and its design rules. Different nodes often imply different circuit generations and architectures. Generally, the smaller the technology node m ...be and differentiate the technologies used in [[fabricating]] [[integrated circuit]]s.
    8 KB (1,225 words) - 13:48, 14 December 2022
  • ...40 nm lithography process|40 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 32 nm process began in 2010. This technology was supe * Natarajan, S., et al. "A 32nm logic technology featuring 2 nd-generation high-k+ metal-gate transistors, enhanc
    10 KB (1,090 words) - 19:14, 8 July 2021
  • ...apple|A8}} or {{apple|A9}}. Those numbers are somewhat expected given tall logic cells are generally optimized for performance and high frequency (e.g., hig ...ss. It should be noted that in recent years, SRAM hasn't scaled as well as logic and I/O have either.
    17 KB (2,243 words) - 19:32, 25 May 2023
  • ...55 nm lithography process|55 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 45 nm process began in 2007. This technology was supe ...of an [[Intel]] [[45 nm]] shuttle test chip including 153 MiB [[SRAM]] and logic test circuits
    5 KB (602 words) - 05:51, 20 July 2018
  • * 533 MT/s dual mode ([[gunning transceiver logic|GTL]] & [[CMOS]]) [[front side bus|FSB]] ...Bonnell's power and area constraints simply couldn't allow for the complex logic needed to support that capability. The [[Instruction Fetch]] consists of 3
    38 KB (5,468 words) - 20:29, 23 May 2019
  • ...chnology, as opposed to gate length or half pitch. Commercial [[integrated circuit]] manufacturing using 22 nm process began in 2008 for memory and 2012 for [ ...Speed Logic !! colspan="2" | Low Power Logic !! colspan="2" | High Voltage Logic
    7 KB (891 words) - 09:52, 25 November 2020
  • * Brand, Adam, et al. "Intel’s 0.25 micron, 2.0 volts logic process technology." Intel Technology Journal Q 3 (1998): 1998. * Integrated Circuit Engineering (ICE) Corporation. "Construction Analysis Intel 266MHz 32-Bit P
    3 KB (325 words) - 21:34, 22 February 2020
  • ...0 nm lithography process|150 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 130 nm process began in 2001. This technology was rep == 130 nm programmable logic devices ==
    5 KB (500 words) - 16:02, 13 May 2020
  • ...he [[7 nm lithography process|7 nm process]] node. Commercial [[integrated circuit]] manufacturing using 5 nm process is set to begin sometime around 2020. ...e]] successor to the company's [[N7 node]], featuring 1.84x improvement in logic density.
    11 KB (1,662 words) - 02:58, 2 October 2022
  • ...[350 nm lithography process|350 nm process]] node. Commercial [[integrated circuit]] manufacturing using 250 nm process began in 1997 and was eventually repla * Brand, Adam, et al. "Intel’s 0.25 micron, 2.0 volts logic process technology." Intel Technology Journal Q 3 (1998): 1998.
    6 KB (661 words) - 16:18, 21 August 2022
  • ...was stored in the {{intel|80386|386's}}/{{intel|84386|486's}} programmable logic array in the processor. All newer AMD models were marked with an "'''N'''"
    13 KB (1,897 words) - 09:30, 21 July 2021
  • ...used to describe the connections of the transistors used to represent the logic gates schematic. ...on language|HDLs]] such as [[Verilog]] or [[VHDL]]. The description of the circuit is known as [[RTL design]]. [[Register Transfer Level]] (RTL) can be effici
    3 KB (431 words) - 22:51, 21 November 2017
  • ...the core and a slightly smaller coverage of the L3. In addition to the LDO circuit integrated for each core is a low-latency power supply [[droop detector]] t ...instructions as it could so it can get going again. Additionally, similar logic can be found at dispatch to ensure good throughput by both threads and high
    79 KB (12,095 words) - 15:27, 9 June 2023
  • ...y]] that states that the number of [[transistor]]s on a dense [[integrated circuit]] roughly doubles every 24 months. ...largely a law of economics whereby the scaling of devices allows for more logic to be packed at a lower price. The law has had a significant impact on the
    2 KB (369 words) - 09:36, 21 February 2023
  • ...he [[5 nm lithography process|5 nm process]] node. Commercial [[integrated circuit]] manufacturing using 3 nm process is set to begin some time around 2023. N3 technology will offer up to 70% logic density gain, up to 15% speed improvement at the same power and up to 30% p
    5 KB (558 words) - 19:04, 29 December 2023
  • ...s''') or just simply a '''core''' is [[macrocell|well-partitioned piece of logic]] capable of independently performing all functions of a processor (i.e., [ ...Intel's [[Core i7-7820X]] has eight identical cores on a single integrated circuit, each capable of operating on equally heavy workloads simultaneously. Unlik
    2 KB (294 words) - 01:39, 13 June 2018
  • A '''counter''' is a device (i.e., [[digital circuit]]) that increments or decrements a stored value (e.g., in a [[physical regi similar to the way an adder can be seen as a simplified [[arithmetic logic unit]] (the function control input hard-wired to addition).
    2 KB (303 words) - 00:30, 28 August 2017

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