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- ...complex arithmetic implementation conforms to Annex G of the C standard ([[IEEE 754|IEC 60559 standard]]).13 KB (1,987 words) - 20:46, 7 January 2015
- ...]].<ref>[http://spectrum.ieee.org/geek-life/hands-on/the-making-of-arduino IEEE Spectrum], accessed on December 24, 2013</ref> Unfortunately their dwindlin3 KB (520 words) - 16:56, 19 December 2015
- ** Minato, O., et al. "A Hi-CMOSII 8Kx8 bit static RAM." IEEE Journal of Solid-State Circuits 17.5 (1982): 793-798. ...l. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.3 KB (314 words) - 23:04, 20 May 2018
- * Minato, O., et al. "A Hi-CMOSII 8Kx8 bit static RAM." IEEE Journal of Solid-State Circuits 17.5 (1982): 793-798. ...l. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.8 KB (969 words) - 12:31, 22 February 2019
- ...V. Leo. "One-device cells for dynamic random-access memories: A tutorial." IEEE Transactions on Electron Devices 26.6 (1979): 839-852.</ref>.5 KB (632 words) - 23:04, 20 May 2018
- library ieee; use ieee.std_logic_1164.all;6 KB (983 words) - 04:50, 8 November 2015
- * [[ANSI/IEEE Std 91-1984]] (MIL/ANSI)5 KB (838 words) - 11:19, 10 February 2020
- ...using dual/tripe gate oxide process." VLSI Technology, 2009 Symposium on. IEEE, 2009. ...ow power mobile applications." VLSI Technology (VLSIT), 2012 Symposium on. IEEE, 2012.6 KB (711 words) - 17:01, 26 March 2019
- ...ack end with eleven levels of copper." VLSI Technology, 2009 Symposium on. IEEE, 2009. ...t applications." Electron Devices Meeting (IEDM), 2009 IEEE International. IEEE, 2009.10 KB (1,090 words) - 19:14, 8 July 2021
- ...SRAM cell size." Electron Devices Meeting (IEDM), 2014 IEEE International. IEEE, 2014. ...metallization." Electron Devices Meeting (IEDM), 2014 IEEE International. IEEE, 2014.17 KB (2,243 words) - 19:32, 25 May 2023
- ...packaging." Electron Devices Meeting, 2007. IEDM 2007. IEEE International. IEEE, 2007.5 KB (602 words) - 05:51, 20 July 2018
- ...IA processor for mobile internet devices in 45 nm high-k metal gate CMOS." IEEE Journal of Solid-State Circuits 44.1 (2009): 73-82. ...ference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International. IEEE, 2008.38 KB (5,468 words) - 20:29, 23 May 2019
- ...arlund, Per, et al. "Haswell: The fourth-generation intel core processor." IEEE Micro 34.2 (2014): 6-20.27 KB (3,750 words) - 06:57, 18 November 2023
- ...28 Mebibit [[SRAM]] wafer from their 16 nm HKMG FinFET process at the 2014 IEEE ISSCC. TSMC followed their 16FF process by the 16FF+ which provided roughly ...FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications." IEEE Journal of Solid-State Circuits 50.1 (2015): 170-177.4 KB (580 words) - 17:00, 26 March 2019
- ...their 112 Mebibit [[SRAM]] wafer from their 20 nm HKMG process at the 2013 IEEE ISSCC. ...ts Conference Digest of Technical Papers (ISSCC), 2013 IEEE International. IEEE, 2013.4 KB (483 words) - 23:04, 20 May 2018
- ...State Circuits Conference]]. A copy of the paper can be [http://ieeexplore.ieee.org/abstract/document/5746311/ found here]. ...ily: Intel® Core i7, i5 and i3." Hot Chips 23 Symposium (HCS), 2011 IEEE. IEEE, 2011.84 KB (13,075 words) - 00:54, 29 December 2020
- ...its Conference, 1998. Digest of Technical Papers. 1998 IEEE International. IEEE, 1998.3 KB (325 words) - 21:34, 22 February 2020
- ...rmance." Solid-State Circuits Conference (ISSCC), 2016 IEEE International. IEEE, 2016.79 KB (11,922 words) - 06:46, 11 November 2022
- * IEEE Hot Chips 30 Symposium (HCS) 2018.38 KB (5,431 words) - 10:41, 8 April 2024
- ...Electron Devices Meeting, 2000. IEDM'00. Technical Digest. International. IEEE, 2000.5 KB (500 words) - 16:02, 13 May 2020