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  • |core family=6 |process=32 nm
    5 KB (710 words) - 03:49, 26 June 2018
  • | last shipment = February 6, 2015 | process = 22 nm
    5 KB (573 words) - 16:24, 13 December 2017
  • |core family=6 |process=14 nm
    4 KB (649 words) - 16:22, 13 December 2017
  • |core family=6 |process=14 nm
    4 KB (649 words) - 16:22, 13 December 2017
  • |core family=6 |process=14 nm
    4 KB (654 words) - 17:22, 26 March 2018
  • ...y process|110 nm process]] (HN) in 2003 and [[90 nm lithography process|90 nm process]] (FN) in 2004. ...8 || colspan="2" | || colspan="2" | 5 || colspan="2" | 7 || colspan="2" | 6 || colspan="2" | 7
    5 KB (500 words) - 16:02, 13 May 2020
  • ...process|150 nm process]] (HN) in 2000 and [[130 nm lithography process|130 nm process]] (FN) in 2001. The 180 nm process was first to use Cu metalization as a replacement for Al for interc
    4 KB (413 words) - 03:04, 17 August 2023
  • ...m node is currently being introduced and is set to get replaced by the [[7 nm process]] in 2018/2019. ...in range of 50-60s nm and a [[minimum metal pitch]] in the range of 30-40s nm. Due to the small feature sizes, for the [[critical dimensions]], [[quad pa
    14 KB (1,903 words) - 06:52, 17 February 2023
  • ...g-edge foundries by 2020/21 timeframe where it will be replaced by the [[5 nm node]]. The term "7 nm" is simply a commercial name for a generation of a certain size and its tec
    13 KB (1,941 words) - 02:40, 5 November 2022
  • ...nm process]] node. Commercial [[integrated circuit]] manufacturing using 5 nm process is set to begin sometime around 2020. The term "5 nm" is simply a commercial name for a generation of a certain size and its tec
    11 KB (1,662 words) - 02:58, 2 October 2022
  • ...nm process began in late 1995. 350 nm was phased out and replaced by [[250 nm]] in 1999. ..." | || colspan="2" | CS-34 || colspan="2" | CS-34EX || colspan="2" | CMOS-6 || colspan="2" | CS-60 || colspan="2" | || colspan="2" | || colspan="2" |
    5 KB (586 words) - 22:44, 4 April 2022
  • ...hy process|130 nm]] and [[90 nm lithography process|90 nm]] processes. 110 nm process was used in the early 2000s. | colspan="6" | Bulk
    1 KB (143 words) - 05:57, 20 July 2018
  • ...This technology superseded by commercial [[130 nm]], [[110 nm]], and [[90 nm]] processes. ...d for the production of 128 MiB, 256 MiB and [[Rambus]] [[DRAM]]s on a 150 nm process. Line 10 opened in the third quarter of [[2000]] producing 16,000 [
    2 KB (238 words) - 02:56, 27 September 2020
  • ...nies during the early to mid 1970s. This process was later superseded by [[6 µm]], [[5 µm]], and [[3 µm]] processes. | ? nm
    710 bytes (91 words) - 06:15, 18 January 2022
  • | 2000 || HiPerMOS 6 || [[0.18 µm]] || 1.5 V || | 2004 || HiPerMOS 8 || [[90 nm]] || || SOI
    943 bytes (88 words) - 01:19, 27 April 2016
  • ...began in late 1990s. 220 nm and was phased out and later replaced by [[180 nm]] processes. | ? nm || ? nm
    975 bytes (117 words) - 06:10, 20 July 2018
  • | core family = 6 | process = 250 nm
    3 KB (316 words) - 16:25, 13 December 2017
  • | core family = 6 | process = 250 nm
    3 KB (319 words) - 16:25, 13 December 2017
  • | core family = 6 | process = 250 nm
    3 KB (313 words) - 16:25, 13 December 2017
  • | core family = 6 | core model = 6
    3 KB (366 words) - 16:25, 13 December 2017

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