This article details Intel's Semiconductor Process Technology.

Timeline

1 µm vs 500 nm yield

Ramps from 1 µm to 65 nm

SRAM test chips from 130 nm to 45 nm

Year	Process	Node	MLayers	µarchs	Transistor	Attributes
	CHMOS I	3 µm	1				Tox	70 nm	Gate Dielectric
							Vdd	5 V	SRAM	1120 µm²
							Lg	3.0 µm
							CPP	7 µm	MMP	11 µm
	CHMOS II	2 µm	1				Tox	40 nm	Gate Dielectric
							Vdd	5 V	SRAM (HD)	1740 µm²
							Lg	2.0 µm
							CPP	5.6 µm	MMP	8 µm
1982	P646 (CHMOS III)	1.5 µm	1	80286, 80386			Tox	25 nm	Gate Dielectric	Si2N2O
							Vdd	5 V	SRAM (HD)	951.7 µm²
							Lg	1.5 µm
							CPP	4.0 µm	MMP	6.4 µm
1987	P648	1.0 µm	2	80486			Lg	1,000 nm
							Tox	? nm	Gate Dielectric
							Vdd	? V
1989	P650	0.8 µm	3	80486			Lg	800 nm
							Tox	? nm	Gate Dielectric
							Vdd	? V
1993	P852	0.5 µm	4	P5			Lg	500 nm
							Tox	8.0 nm	Gate Dielectric
							Vdd	3.3 V
1995	P854	0.35 µm	4	P6			Lg	350 nm
							Tox	5.2 nm	Gate Dielectric
							Vdd	2.5 V
1997	P856 P856.5	0.25 µm	5	P6			Lg	200 nm
							Tox	3.1 nm	Gate Dielectric	SiO2
							Vdd	1.8 V
1999	P858	0.18 µm	6	NetBurst			Lg	130 nm
							Tox	2.0 nm	Gate Dielectric	SiO2
							Vdd	1.6 V
2001	P860	0.13 µm	6	Pentium M			Lg	70 nm
							Tox	1.4 nm	Gate Dielectric	SiO2
							Vdd	1.4 V
							SRAM (HD)	2.45 µm²
2003	P1262	90 nm	7	Pentium M			Lg	50 nm
							Tox	1.2 nm	Gate Dielectric	SiO2
							Vdd	1.2 V
							SRAM (HD)	1.00 µm²
2005	P1264	65 nm	8	Core, Modified Pentium M			Tox		Gate Dielectric	SiO2
							Vdd		SRAM	0.570 µm²
							Lg	35 nm
							CPP	220 nm	MMP	210 nm
2007	P1266	45 nm	9	Penryn, Nehalem			Tox		Gate Dielectric	High-κ
							Vdd		SRAM	0.346 µm²
							Lg	25 nm
							CPP	160 nm	MMP	180 nm
2009	P1268	32 nm	10	Westmere, Sandy Bridge			Tox		Gate Dielectric	High-κ
							Vdd		SRAM	0.148 µm²
							Lg	30 nm
							CPP	112.5 nm	MMP	112.5 nm
2011	P1270	22 nm	11	Ivy Bridge, Haswell			Tox		Gate Dielectric	High-κ
							Vdd		SRAM	0.092 µm²
							Lg	26 nm
							CPP	90 nm	MMP	80 nm
2014	P1272	14 nm	11	Broadwell, Skylake, Kaby Lake, Coffee Lake			Tox		Gate Dielectric	High-κ
							Vdd		SRAM	0.0499 µm²
							Lg	20 nm
							CPP	70 nm	MMP	52 nm
2017	P1274	10 nm		Cannonlake, Icelake, Tigerlake			Tox		Gate Dielectric	High-κ
							Vdd		SRAM	0.0312 µm²
							Lg	18 nm ?
							CPP	54 nm	MMP	36 nm
2019	P1276	7 nm
2022	P1278	5 nm