• 6 µm lithography process
  | nMOS/pMOS || depletion-mode nMOS || nMOS/pMOS/CMOS ||
  1 KB (119 words) - 23:04, 20 May 2018
• 1.5 µm lithography process
  | HMOS-II || HMOS-E || P646 (CHMOS III) || NMOS III || || CMOS-2 ! colspan="3" | [[HP]] NMOS-III Design Rules
  3 KB (332 words) - 23:04, 20 May 2018
• 1 µm lithography process
  | nMOS || CMOS || CMOS || BiCMOS
  1 KB (166 words) - 23:04, 20 May 2018
• toshiba/t3400/t3472
  | tech = nMOS ...designed by [[Toshiba]] during the late 1970s. The [[microprocessor]] uses nMOS technology and was primarily used in printers and displays.
  1 KB (119 words) - 14:45, 3 February 2016
• 8 µm lithography process
  ...d became the first truly widely used DRAM chip. Those chips used Si-gate [[nMOS]] transistors using a polysilicon word line and an aluminum metal bit line. | fab 1 xtor.tech = nMOS, pMOS
  5 KB (632 words) - 23:04, 20 May 2018
• cmos/static
  * pull-down network (PDN) - a set of [[NMOS]] transistors connected between GND and the output line
  1 KB (221 words) - 18:07, 26 November 2018
• mosfet
  [[File:Nmos.svg|thumb|right|[[n-type semiconductor]].]] An '''nMOS transistor''' is built with a p-type body with two regions of n-type semico
  8 KB (1,362 words) - 23:38, 17 November 2015
• inverter
  ...to HIGH as it's connected to VDD but not GND. When the input is HIGH, the nMOS transistor is on and the pMOS transistor is off yielding an output that is ...e \( i_{DP} = i_{DN} = 0 \). When the input is LOW, pMOS is conducting and nMOS is off; the load capacitor is charged via the pMOS device.The power dissipa
  6 KB (983 words) - 04:50, 8 November 2015
• general instrument/sba
  | tech = nMOS
  2 KB (244 words) - 00:33, 19 May 2016
• general instrument/sba/sba-1
  | tech = nMOS
  1 KB (140 words) - 05:28, 22 January 2016
• matsushita/mn1400
  | tech 2 = nMOS ...instructions with a 10 microsecond instruction cycle. The chips come in [[nMOS]], [[pMOS]], and [[CMOS]] versions.
  4 KB (462 words) - 19:14, 13 October 2019
• matsushita/mn1500
  | tech 2 = nMOS | {{matsushita|MN1542}} || 2048x8 ROM, 152x4 RAM, 28 I/O || NMOS ||
  3 KB (301 words) - 19:23, 13 October 2019
• motorola/10800
  ...]], the 10800 series was designed for very high speed applications where [[nMOS]] components were insufficient.
  2 KB (179 words) - 00:03, 3 February 2016
• national semiconductor/cops i
  .... A year later, National introduced the {{national|cops ii|COPS II}}, an [[nMOS]] (and later [[CMOS]]) versions of those chips.
  2 KB (274 words) - 18:29, 5 February 2016
• national semiconductor/cops ii
  | tech = nMOS ...national|cops i|COPS I}} in 1977. Components in the COPS II were made in [[nMOS]] and [[CMOS]] technology instead of [[pMOS]] as used in COPS I. The COPS I
  6 KB (685 words) - 22:49, 5 February 2016
• intel/3000
  | {{\|3222}} || Refresh Controller for 4K NMOS DRAMs
  3 KB (308 words) - 05:03, 18 February 2020
• fujitsu/mb8840
  | tech = nMOS ...40/MB8840H series''' is a [[microprocessor family|family]] of {{arch|4}} [[nMOS]] [[microcontroller]]s developed by [[Fujitsu]] and introduced in 1977{{dat
  2 KB (263 words) - 14:57, 4 February 2016
• fujitsu/mb88500
  * {{fujitsu|MB8840}}, a [[NMOS]] version
  2 KB (215 words) - 14:55, 4 February 2016
• fujitsu/mb8850
  ...is architecturally identical to the {{fujitsu|MB8840|MB8840 family}} (An [[nMOS]] version). The {{fujitsu|MB88500}} series is a high-speed version of this * {{fujitsu|MB8840}}, a [[NMOS]] version
  2 KB (230 words) - 07:46, 28 February 2017
• american microsystems/s2000
  | tech = nMOS
  2 KB (280 words) - 00:57, 19 May 2016

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