This article details Intel's Semiconductor Process Technology.

Timeline

Year	Process Name	Node Name	Metal Layers	µarchs	Attributes
1982	P646	1.5 µm	2	80286, 80386			Lg	1,500 nm
							Tox	? nm	Gate Dielectric	Si2N2O
							Vdd	? V
1987	P648	1.0 µm	2	80486			Lg	1,000 nm
							Tox	? nm	Gate Dielectric
							Vdd	? V
1989	P650	0.8 µm	3	80486			Lg	800 nm
							Tox	? nm	Gate Dielectric
							Vdd	? V
1993	P852	0.5 µm	4	P5			Lg	500 nm
							Tox	8.0 nm	Gate Dielectric
							Vdd	3.3 V
1995	P854	0.35 µm	4	P6			Lg	350 nm
							Tox	5.2 nm	Gate Dielectric
							Vdd	2.5 V
1997	P856 P856.5	0.25 µm	5	P6			Lg	200 nm
							Tox	3.1 nm	Gate Dielectric	SiO2
							Vdd	1.8 V
1999	P858	0.18 µm	6	NetBurst			Lg	130 nm
							Tox	2.0 nm	Gate Dielectric	SiO2
							Vdd	1.6 V
2001	P860	0.13 µm	6	Pentium M			Lg	70 nm
							Tox	1.4 nm	Gate Dielectric	SiO2
							Vdd	1.4 V
2003	P1262	90 nm	7	Pentium M			Lg	50 nm
							Tox	1.2 nm	Gate Dielectric	SiO2
							Vdd	1.2 V
2005	P1264	65 nm	8	Core, Modified Pentium M			Lg	35 nm
							Tox	? nm	Gate Dielectric	SiO2
							Vdd	? V
2007	P1266	45 nm	9	Penryn, Nehalem			Lg	25 nm
							Tox	? nm	Gate Dielectric	High-κ
							Vdd	? V
2009	P1268	32 nm	10	Westmere, Sandy Bridge			Lg	30 nm
							Tox	? nm	Gate Dielectric	High-κ
							Vdd	? V
2011	P1270	22 nm	11	Ivy Bridge, Haswell			Lg	26 nm
							Tox	? nm	Gate Dielectric	High-κ
							Vdd	? V
2014	P1272	14 nm	11	Broadwell, Skylake, Kaby Lake, Coffee Lake			Lg	20 nm
							Tox	? nm	Gate Dielectric	High-κ
							Vdd	? V
2017	P1274	10 nm		Cannonlake, Icelake, Tigerlake			Lg	18? nm
							Tox	? nm	Gate Dielectric	High-κ
							Vdd	? V
2019	P1276	7 nm
2022	P1278	5 nm