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PPS-4 (10660) - Rockwell International
| Edit Values | |
| Rockwell PPS-4 | |
| General Info | |
| Designer | Rockwell International |
| Manufacturer | Rockwell International |
| Model Number | PPS-4 |
| Part Number | 10660, 12660 |
| Introduction | August, 1972 (launched) |
| General Specs | |
| Family | PPS-4 |
| Frequency | 198.864 kHz |
| Microarchitecture | |
| Microarchitecture | PPS-4 |
| Process | 10 μm |
| Transistors | 1,900 |
| Die | 12 mm² |
| Word Size | 4 bit |
| Max Memory | 2 KiB |
| Max Address Mem | 4 KiB |
| Electrical | |
| TDP | 600 mW |
| OP Temperature | 0 °C – 70 °C |
The PPS-4 (also known by its part number 10660) was a 4-bit microprocessor designed by Rockwell International and first produced at the 3rd quarter of 1972, making it one of the earliest commercially available microprocessors. The PPS-4 is part of the PPS-4 Family.
It appears that in 1975-6 Rockwell might have renamed the 10660 to 12660 after introducing the PPS-4/2. It's not exactly clear if any actual changes were done to the die itself, but its entirely possible.
Instruction set
- Main article: PPS-4 Instruction Set
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See also
| This article is still a stub and needs your attention. You can help improve this article by editing this page and adding the missing information. |
Facts about "PPS-4 (10660) - Rockwell International"
| base frequency | 0.199 MHz (1.98864e-4 GHz, 198.864 kHz) + |
| designer | Rockwell International + |
| die area | 12 mm² (0.0186 in², 0.12 cm², 12,000,000 µm²) + |
| family | PPS-4 + |
| first launched | August 1972 + |
| full page name | rockwell international/pps-4/10660 + |
| instance of | microprocessor + |
| ldate | August 1972 + |
| manufacturer | Rockwell International + |
| max memory | 0.00195 MiB (2 KiB, 2,048 B, 1.907349e-6 GiB, 1.862645e-9 TiB) + |
| max memory address | 4 KiB + |
| max operating temperature | 70 °C + |
| microarchitecture | PPS-4 + |
| min operating temperature | 0 °C + |
| model number | PPS-4 + |
| name | Rockwell PPS-4 + |
| part number | 10660 + and 12660 + |
| process | 10,000 nm (10 μm, 0.01 mm) + |
| tdp | 0.6 W (600 mW, 8.046e-4 hp, 6.0e-4 kW) + |
| transistor count | 1,900 + |
| word size | 4 bit (0.5 octets, 1 nibbles) + |