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Revision as of 18:01, 11 June 2017

This article details details DEC's Semiconductor Process Technology history for research and posterity.

The table below shows the history of DEC's process scaling. Values were taken from various DEC documents including historical presentations and journals, ISSCC papers, and IEDM papers. Note that while a great deal of effort was put into ensuring the accuracy of the values, some numbers vary to a small degree between DEC's own documents and therefore discrepancies may exist.

Timeline

YearProcessNodeMLayersµarchsAttributes
1984 ZMOS 3 µm 2 V-11,
MicroVAX II		Tox43 nm
Lg3 µm
1986 CMOS-1 2 µm 2 CVAXTox30 nmMasks12
Vdd5 V
Lg2 µm
1988 CMOS-2 1.5 µm 2 CVAX+,
Rigel		Tox22.5 nmMasks13
Vdd5 V
Lg1.5 µm
1990 CMOS-3 1 µm 2 MariahTox15 nmMasks20
Vdd3.3 V
Lg1 µm
1991 CMOS-4 0.75 µm 3 Alpha 21064,
NVAX		Tox10.5 nmMasks21
Vdd3.3 VSRAM100 µm²
Lg0.75 µmLeff0.50 µm
1996 CMOS-4S 0.675 µm 3 NVAX,
NVAX+,
SOC		Tox
Lg0.675 µm
1994 CMOS-5 0.50 µm 4 Alpha 21164,
NVAX++		Tox
Lg0.50 µm
1996 CMOS-6 0.35 µm 4 Alpha 21264,
StrongARM		Tox6 nm
Lg0.35 µmLeff0.25 µm
1997 CMOS-7 0.25 µm 5 Tox
1997Fab-6 in Hudson, Mass was sold to Intel which consequently upgraded it for $800M to Intel's propiatery 0.18 µm (see Intel's Process).
2013In late 2013 Intel announced that it will be closing the Hudson Fab due to no longer meeting their requirements such as aging technology.

Additionally, DEC fabricated on Motorola's ECL process:

Mosaic1 3 µm ECL
Mosaic2 1 µm ECL
Mosaic3

Other processes

Semiconductor Process history by company:

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