Semiconductor & Computer Engineering
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'''Embedded DRAM (eDRAM)''' or '''Embedded Dynamic Random-Access Memory (eDRAM)''' is a fully logic-compatible [[embedded memory]] that is typically integrated onto a logic [[integrated circuit]], either as part of an SoC or as a stand-alone chip that's packaged alongside the main SoC. | '''Embedded DRAM (eDRAM)''' or '''Embedded Dynamic Random-Access Memory (eDRAM)''' is a fully logic-compatible [[embedded memory]] that is typically integrated onto a logic [[integrated circuit]], either as part of an SoC or as a stand-alone chip that's packaged alongside the main SoC. | ||
| + | == Overview == | ||
| + | Embedded DRAM - or eDRAM - refers to a specific type of [[dynamic random-access memory]] that has been designed to be fully logic-compatible. In other words, it is DRAM that was designed to be integrated along with other standard logic onto a single integrated circuit. eDRAM is different from standard DRAM which requires a specialized process. Instead, it is designed to work with standard CMOS logic and be integrated using a standard logic [[process technology]] as well as be mixed along with standard CMOS logic and other analog transistors. | ||
| + | |||
| + | === Characteristics === | ||
| + | Embedded DRAM is considered an attractive type of [[volatile memory|volatile]] [[embedded memory]] and a viable alternative to [[SRAM]]. There are various ways of constructing eDRAM, but typically it can be found implemented using just a [[single transistor and a single capacitor]] (1T1C). For this reason, eDRAM is highly dense, typically on the order of 3-5x the density of a standard high-density SRAM bit-cell on an equivalent [[process node]]. Chip architects typically take advantage of this density and utilize embedded DRAM to create large pools of caches far beyond what would be possible with SRAM. | ||
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| + | === Industry === | ||
| + | {{empty section}} | ||
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| + | == Implementations == | ||
| + | {{empty section}} | ||
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| + | == See also == | ||
| + | * [[embedded memory]] | ||
| + | * [[SRAM]] | ||
[[Category:embedded memory]] | [[Category:embedded memory]] | ||
Latest revision as of 14:31, 25 December 2022
Embedded DRAM (eDRAM) or Embedded Dynamic Random-Access Memory (eDRAM) is a fully logic-compatible embedded memory that is typically integrated onto a logic integrated circuit, either as part of an SoC or as a stand-alone chip that's packaged alongside the main SoC.
Overview[edit]
Embedded DRAM - or eDRAM - refers to a specific type of dynamic random-access memory that has been designed to be fully logic-compatible. In other words, it is DRAM that was designed to be integrated along with other standard logic onto a single integrated circuit. eDRAM is different from standard DRAM which requires a specialized process. Instead, it is designed to work with standard CMOS logic and be integrated using a standard logic process technology as well as be mixed along with standard CMOS logic and other analog transistors.
Characteristics[edit]
Embedded DRAM is considered an attractive type of volatile embedded memory and a viable alternative to SRAM. There are various ways of constructing eDRAM, but typically it can be found implemented using just a single transistor and a single capacitor (1T1C). For this reason, eDRAM is highly dense, typically on the order of 3-5x the density of a standard high-density SRAM bit-cell on an equivalent process node. Chip architects typically take advantage of this density and utilize embedded DRAM to create large pools of caches far beyond what would be possible with SRAM.
Industry[edit]
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Implementations[edit]
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This section is empty; you can help add the missing info by editing this page. |