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Bipolar-CMOS-DMOS (BCD)
< stmicroelectronics

Bipolar-CMOS-DMOS (BCD) is a custom BiCMOS manufacturing process technology developed by STMicroelectronics (then SGS-Thomson) first introduced 1986.

Processes[edit]

Year Name Lithography Technology
1984 BCD1 4 µm
1988 BCD2 2.5 µm
1992 BCD-Offline 2 µm
1994 BCD3 1.2 µm
1994 BCD3s 1 µm
1995 BCD4 800 nm
1995 BCD4s 720 nm
1996 BCD5 600 nm
1996 BCD5s 570 nm
1997 BCD6 350 nm
BCD6s 320 nm
2006 BCD7 250 nm
2008 BCD8 180 nm
2013 BCD8s 160 nm
2013 BCD8sP 160 nm
2014 BCD9 110 nm
2016 BCD10 90 nm

See also[edit]