Bipolar-CMOS-DMOS (BCD) is a custom BiCMOS manufacturing process technology developed by STMicroelectronics (then SGS-Thomson) first introduced 1986.

Processes

Year	Name	Lithography	Technology
1984	BCD1	4 µm
1988	BCD2	2.5 µm
1992	BCD-Offline	2 µm
1994	BCD3	1.2 µm
1994	BCD3s	1 µm
1995	BCD4	800 nm
1995	BCD4s	720 nm
1996	BCD5	600 nm
1996	BCD5s	570 nm
1997	BCD6	350 nm
	BCD6s	320 nm
2006	BCD7	250 nm
2008	BCD8	180 nm
2013	BCD8s	160 nm
2013	BCD8sP	160 nm
2014	BCD9	110 nm
2016	BCD10	90 nm

See also

• Motorola SmartMOS