• cmos
  ...fet|MOS]] [[transistor]]s - [[pmos transistor|pMOS]] and [[pMOS transistor|nMOS]]. CMOS is the dominant technology used for [[VLSI]] and [[ULSI]] circuit ...S]] and [[nMOS transistor|nMOS]]. To better understand this, consider an [[nMOS transistor]]. Because it can pull no higher than V_DD - V<sub>t</
  7 KB (1,159 words) - 21:01, 8 February 2019
• bicmos
  ...ors are cascaded with an [[NPN transistor]]. When the input is HIGH, the [[NMOS transitor]] is conducting becoming the base current for the Q₂ N
  2 KB (329 words) - 08:33, 16 January 2019
• gate universality
  ...removing redundant sets of [[pMOS transistor|pMOS]] and [[nMOS transistor|nMOS]] pairs of [[transistor]]s.
  903 bytes (132 words) - 00:34, 8 December 2015
• logic family
  *** [[nmos logic|n-type metal–oxide–semiconductor logic]] (nMOS)
  1 KB (145 words) - 00:40, 26 December 2015
• ti/tms1000
  | tech 2 = nMOS ...OS logic|pMOS]] technology, TI later expended the family into [[nMOS logic|nMOS]] and [[CMOS]].
  6 KB (711 words) - 04:39, 26 April 2017
• ti/tms0100
  | tech = nMOS
  1 KB (121 words) - 22:16, 16 January 2016
• dec/lsi-11
  | tech = nMOS ...1975. The chipset was manufactured by [[Western Digital]] in [[nMOS logic|nMOS]] technology under a $6.3M contract<ref>{{apa mag|month=February|day=26|yea
  2 KB (253 words) - 00:33, 19 May 2016
• western digital/mcp-1600
  | tech = nMOS
  1 KB (148 words) - 01:04, 19 May 2016
• general instrument/pic
  | tech = nMOS
  3 KB (423 words) - 00:33, 19 May 2016
• general instrument/sba/sba
  | tech = nMOS
  1 KB (114 words) - 05:27, 22 January 2016
• toshiba/t3400
  | tech = nMOS
  2 KB (233 words) - 15:20, 3 February 2016
• toshiba/t3400/t3444
  | tech = nMOS ...designed by [[Toshiba]] during the late 1970s. The [[microprocessor]] uses nMOS technology and was primarily used in very low-end controllers.
  1 KB (146 words) - 11:49, 23 May 2021
• amd/am9080
  | tech = nMOS
  5 KB (683 words) - 23:46, 7 March 2018
• fairchild/f8
  | tech = nMOS
  2 KB (172 words) - 17:18, 12 December 2016
• intel/mcs-80
  | tech = nMOS
  4 KB (406 words) - 16:10, 26 January 2019
• 14 nm lithography process
  ...[[Intel]]'s 2nd generation FinFET transistors. Intel uses TiN pMOS / TiAlN nMOS as work function metals. Intel makes use of 193 nm immersion lithography wi ...irst generation of FinFET-based transistors. Samsung uses TiN pMOS / TiAIC nMOS as work function metals. Samsung node has gone through a number of refineme
  17 KB (2,243 words) - 19:32, 25 May 2023
• intel/microarchitectures/kaby lake
  [[File:intel 14nm+ (nmos).png|400px]]
  38 KB (5,431 words) - 10:41, 8 April 2024
• 7 µm lithography process
  | NMOS I | nMOS
  710 bytes (91 words) - 06:15, 18 January 2022
• 5 µm lithography process
  ...ng density. Loveland went on on to create a third and final process, the ''NMOS III'' using a [[1.5 µm process]]. While they succeeded in doubling the den | fab 1 xtor.tech = nMOS
  2 KB (325 words) - 06:22, 20 July 2018
• 3.5 µm lithography process
  | nMOS || nMOS || nMOS
  1 KB (122 words) - 06:21, 20 July 2018

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