• nec/μcom-45/μpd652
  | tech = pMOS
  1 KB (160 words) - 00:35, 21 January 2016
• nec/μcom-43/μpd557l
  | tech = pMOS
  2 KB (244 words) - 06:13, 1 August 2018
• nec/μcom-45/μpd550l
  | tech = pMOS
  1 KB (171 words) - 13:22, 22 January 2016
• nec/μcom-45/μpd554l
  | tech = pMOS
  1 KB (184 words) - 13:22, 22 January 2016
• rockwell international/pps-4-1
  | tech = pMOS
  2 KB (219 words) - 01:00, 19 May 2016
• intel/mcs-40
  | tech = pMOS
  2 KB (177 words) - 15:36, 12 May 2016
• sharp corporation/sm
  | tech = pMOS | {{\|SM-1}} || pMOS || 882 B || 48x4 b ||
  2 KB (260 words) - 19:14, 8 February 2016
• intel/mcs-8
  | tech = pMOS
  3 KB (382 words) - 17:58, 19 May 2016
• intel/mcs-8/8008
  |technology=pMOS
  2 KB (254 words) - 19:24, 23 March 2022
• intel/mcs-8/8008-1
  | technology = pMOS
  1 KB (151 words) - 16:24, 13 December 2017
• 14 nm lithography process
  ...14 nm became [[Intel]]'s 2nd generation FinFET transistors. Intel uses TiN pMOS / TiAlN nMOS as work function metals. Intel makes use of 193 nm immersion l ...alFoundries first generation of FinFET-based transistors. Samsung uses TiN pMOS / TiAIC nMOS as work function metals. Samsung node has gone through a numbe
  17 KB (2,243 words) - 19:32, 25 May 2023
• 22 nm lithography process
  | N/PMOS Idsat/Ioff (mA/µm) || 1.08/0.91 @ 0.75 V, 100 nA/µm || 0.71/0.59 @0.75 V,
  7 KB (891 words) - 09:52, 25 November 2020
• intel/microarchitectures/sandy bridge (client)
  ...the square box) labeled T1, T2, and T3. The effective size of the shared [[PMOS]] is set during [[post-silicon]] production testing by enabling and disabli
  84 KB (13,075 words) - 00:54, 29 December 2020
• intel/microarchitectures/kaby lake
  [[File:intel 14nm+ (pmos).png|400px]]
  38 KB (5,431 words) - 10:41, 8 April 2024
• 5 nm lithography process
  ...er [[FinFET devices]]. We believe TSMC is employing a SiGe channel for the pMOS devices. It has been suggested that the channel has 37% Ge composition. TSM
  11 KB (1,662 words) - 02:58, 2 October 2022
• Property:technology
  ** [[Allows value::pMOS]]
  466 bytes (57 words) - 19:57, 18 February 2020
• intel/microarchitectures/coffee lake
  [[File:intel 14nm++ (pmos).png|400px]]
  30 KB (4,192 words) - 13:48, 10 December 2023
• baikal/baikal-m
  | technology = <!-- technology (e.g. CMOS, pMOS, nMOS, etc..) -->
  4 KB (473 words) - 09:26, 3 December 2019
• intel/process
  {{intel proc tech |year=1972 |name=PMOS I |mlayers=1 |node=10 µm
  13 KB (1,998 words) - 03:56, 4 March 2022
• static random-access memory
  ...wer dissipation in favor of higher density. In this configuration, the two PMOS transistors are replaced with denser high resistance resistors.
  6 KB (920 words) - 03:14, 30 December 2019

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