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TSARLET - Microarchitectures - CEA Leti
Edit Values | |
TSARLET µarch | |
General Info | |
Arch Type | CPU |
Designer | CEA-Leti |
Manufacturer | STMicroelectronics |
Process | 28 nm, 65 nm |
Core Configs | 96 |
Pipeline | |
Type | Scalar, Single-issue |
OoOE | No |
Speculative | No |
Reg Renaming | No |
Stages | 5 |
Decode | 1-way |
Instructions | |
ISA | MIPS32v1 |
Cache | |
L1I Cache | 16 KiB/core |
L1D Cache | 16 KiB/core |
L2 Cache | 256 KiB/core |
L3 Cache | 1 MiB/core |
TSARLET was a research microarchitecture designed by CEA-Leti demonstarting the theoretical capabilities of a large-scale high-performance 3D stacked chiplets-based SoC technology. The project comprised 96 MIPS cores built using 6 chiplets 3D stack on an active interposer in order to demonstarte in-package silicon scale-out capabilities with superior inter-chip capabilities while reducing the overall power and production cost.
Contents
Architecture
Memory Hierarchy
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Overview
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Package
- BGA-1517
- 39 x 39, 40 mm x 40 mm, 10 layers
- 1517 balls
- 500 µm, 1 mm pitch
Die
Compute chiplet
- STMicroelectronics 28 nm FDSOI
- 10 metal layers, 0.5-1.3V + adaptive biasing
- 4 mm x 5.6 mm (22.4 mm²) silicon area
- 395,000,000 transistors
- I/O
- 2D
- 249 signal, 237 power
- C4 bumps, 200 µm pitch
- 3D
- 2618 signal
- up to metal 10 @ 20 µm pitch
- 2D
Base interposer die
- 65 nm process
- 7 metal layers, MIM option, 1.2 V
- 13.05 mm x 15.16 mm (197.8 mm²) silicon area
- 15,000,000 transistors
- I/O
- 150,000 μ-bumps, 20 μm pitch
- 20,000 signal, 120,000 power + 10,000 dummies
- 14,000 TSV middle, 40 μm pitch
- 2,000 signal, 12,000 power
- 150,000 μ-bumps, 20 μm pitch
Facts about "TSARLET - Microarchitectures - CEA Leti"
codename | TSARLET + |
core count | 96 + |
designer | CEA-Leti + |
full page name | cea-leti/microarchitectures/tsarlet + |
instance of | microarchitecture + |
instruction set architecture | MIPS32v1 + |
manufacturer | STMicroelectronics + |
microarchitecture type | CPU + |
name | TSARLET + |
pipeline stages | 5 + |
process | 28 nm (0.028 μm, 2.8e-5 mm) + and 65 nm (0.065 μm, 6.5e-5 mm) + |