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Difference between revisions of "samsung/microarchitectures/m3"
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'''Mongoose 3''' ('''M3''') is an [[ARM]] microarchitecture designed by [[Samsung]] for their consumer electronics serving as a successor to the {{\\|Mongoose 2}}. | '''Mongoose 3''' ('''M3''') is an [[ARM]] microarchitecture designed by [[Samsung]] for their consumer electronics serving as a successor to the {{\\|Mongoose 2}}. | ||
| + | == Process Technology == | ||
| + | The M3 was fabricated on Samsung's second generation [[10 nm process|10LPP (Low Power Plus) process]]. | ||
| + | == Compiler support == | ||
| + | {| class="wikitable" | ||
| + | |- | ||
| + | ! Compiler !! Arch-Specific || Arch-Favorable | ||
| + | |- | ||
| + | | [[GCC]] || <code>-march=armv8-a+crypto</code> || <code>-mtune=exynos-m3</code> | ||
| + | |} | ||
| + | |||
| + | == Architecture == | ||
{{future information}} | {{future information}} | ||
| + | === Key changes from {{\\|Mongoose 1}}/{{\\|Mongoose 2|M2}} === | ||
| + | * [[10 nm|10nm 10LPP process]] (from 1st gen 10LPP) | ||
| + | * Core | ||
| + | ** Front-end | ||
| + | *** larger [[instruction queue]] (40 entries, up from 24) | ||
| + | *** 6-way decode (from 4) | ||
| + | *** µOP fusion | ||
| + | **** Can fuse address generation and memory operations | ||
| + | **** Can fuse literal generation operations | ||
| + | ** Back-end | ||
| + | *** larger [[ReOrder buffer]] (228 entries, from 96 entries) | ||
| + | *** Has a fastpath logical shift of up to 3 places | ||
| + | <!-- | ||
| + | *** Paired 128 bit loads and stores are no longer slow | ||
| + | --> | ||
| + | * branch misprediction penalty increased (16, from 14) | ||
| + | |||
| + | {{expand list}} | ||
Revision as of 02:33, 5 February 2018
| Edit Values | |
| Mongoose 3 µarch | |
| General Info | |
| Arch Type | CPU |
| Designer | Samsung |
| Manufacturer | Samsung |
| Process | 10 nm |
| Pipeline | |
| OoOE | Yes |
| Speculative | Yes |
| Reg Renaming | Yes |
| Decode | 6-way |
| Instructions | |
| ISA | ARMv8 |
| Cache | |
| L1I Cache | 64 KiB/core 4-way set associative |
| L1D Cache | 32 KiB/core 8-way set associative |
| L2 Cache | 2 MiB/cluster 16-way set associative |
| Succession | |
Mongoose 3 (M3) is an ARM microarchitecture designed by Samsung for their consumer electronics serving as a successor to the Mongoose 2.
Process Technology
The M3 was fabricated on Samsung's second generation 10LPP (Low Power Plus) process.
Compiler support
| Compiler | Arch-Specific | Arch-Favorable |
|---|---|---|
| GCC | -march=armv8-a+crypto |
-mtune=exynos-m3
|
Architecture
Key changes from Mongoose 1/M2
- 10nm 10LPP process (from 1st gen 10LPP)
- Core
- Front-end
- larger instruction queue (40 entries, up from 24)
- 6-way decode (from 4)
- µOP fusion
- Can fuse address generation and memory operations
- Can fuse literal generation operations
- Back-end
- larger ReOrder buffer (228 entries, from 96 entries)
- Has a fastpath logical shift of up to 3 places
- Front-end
- branch misprediction penalty increased (16, from 14)
This list is incomplete; you can help by expanding it.
Facts about "Exynos M3 - Microarchitectures - Samsung"
| codename | Mongoose 3 + |
| designer | Samsung + |
| full page name | samsung/microarchitectures/m3 + |
| instance of | microarchitecture + |
| instruction set architecture | ARMv8 + |
| manufacturer | Samsung + |
| microarchitecture type | CPU + |
| name | Mongoose 3 + |
| process | 10 nm (0.01 μm, 1.0e-5 mm) + |