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|l2 per=core | |l2 per=core | ||
|l2 desc=8-way set associative | |l2 desc=8-way set associative | ||
− | |l3= | + | |l3=2 MiB |
|l3 per=cluster | |l3 per=cluster | ||
|l3 desc=16-way set associative | |l3 desc=16-way set associative |
Revision as of 10:44, 29 July 2019
Edit Values | |
Mongoose 4 µarch | |
General Info | |
Arch Type | CPU |
Designer | Samsung |
Manufacturer | Samsung |
Introduction | 2019 |
Process | 8 nm |
Core Configs | 4 |
Pipeline | |
Type | Superscalar, Superpipeline |
OoOE | Yes |
Speculative | Yes |
Reg Renaming | Yes |
Stages | 16 |
Decode | 6-way |
Instructions | |
ISA | ARMv8.2 |
Cache | |
L1I Cache | 64 KiB/core 4-way set associative |
L1D Cache | 64 KiB/core 8-way set associative |
L2 Cache | 512 KiB/core 8-way set associative |
L3 Cache | 2 MiB/cluster 16-way set associative |
Succession | |
Exynos Mongoose 4 (M4) is the successor to the Mongoose 3, an 8 nm ARM microarchitecture designed by Samsung for their consumer electronics.
Contents
Process Technology
The M4 is fabricated on Samsung's 8 nm process (8LPP).
Compiler support
Compiler | Arch-Specific | Arch-Favorable |
---|---|---|
GCC | -mcpu=exynos-m4 |
-mtune=exynos-m4
|
LLVM | -mcpu=exynos-m4 |
-mtune=exynos-m4
|
Architecture
The M4 is an incremental microarchitecture that brought a die shrink and minor enhancements.
Key changes from M3
- 8 nm process (from 10 nm)
- ARMv8.2 (from ARMv8)
- Support for full FP16 scalar extension
- Support for integer dot product extension
- Front end
- Larger instruction queue (48 entries, up from 40)
- Back end
- LSU executiion units reorganized
- Floating-point execution units reorganized
This list is incomplete; you can help by expanding it.
Block Diagram
Individual Core
Memory Hierarchy
- Cache
- L1I Caches
- 64 KiB, 4-way set associative
- 128 B line size
- per core
- Parity-protected
- 64 KiB, 4-way set associative
- L1D Cache
- 64 KiB, 8-way set associative
- 64 B line size
- per core
- 4 cycles for fastest load-to-use
- 32 B/cycle load bandwidth
- 16 B/cycle store bandwidth
- 64 KiB, 8-way set associative
- L2 Cache
- 512 KiB, 8-way set associative
- Inclusive of L1
- 12 cycles latency
- 32 B/cycle bandwidth
- L3 Cache
- 2 MiB, 16-way set associative
- 1 MiB slice/core
- Exlusive of L2
- ~37-cycle typical (NUCA)
- 2 MiB, 16-way set associative
- BIU
- 80 outstanding transactions
- L1I Caches
The M3 TLB consists of dedicated L1 TLB for instruction cache (ITLB) and another one for data cache (DTLB). Additionally, there is a unified L2 TLB (STLB).
- TLBs
- ITLB
- 512-entry
- DTLB
- 32-entry
- 512-entry Mid-level DTLB
- STLB
- 4,096-entry
- Per core
- ITLB
- BPU
- 4K-entry main BTB
- 128-entry µBTB
- 64-entry return stack
- 16K-entry L2 BTB
Core
The core of the M4 is largely the same as M3. A number of buffers have been enlarged and some of the execution units have been reorganized.
Execution engine
Floating-point cluster
The execution units on the M4 have been reorganized. In total, three new units were also added - a second FP square root unit, a second vector multiplication unit, and a new horizontal vector arithmetic unit.
Memory subsystem
Samsung also made an enhancement to the M4 memory subsystem. In the M3, there were three AGUs - two dedicated Load AGUs and a single dedicated Store AGU. In the M4, Samsung changed one of the dedicated Load AGUs into a generic AGU capable of handling both loads and stores. In other words, the M4 can now schedule both load and store µOPs on two ports.
All M4 Processors
List of M4-based Processors | |||||||
---|---|---|---|---|---|---|---|
Main processor | Integrated Graphics | ||||||
Model | Family | Launched | Arch | Cores | Frequency | GPU | Frequency |
Count: 0 |
Bibliography
- LLVM: lib/Target/AArch64/AArch64SchedExynosM4.td
codename | Mongoose 4 + |
core count | 4 + |
designer | Samsung + |
first launched | 2019 + |
full page name | samsung/microarchitectures/m4 + |
instance of | microarchitecture + |
instruction set architecture | ARMv8.2 + |
manufacturer | Samsung + |
microarchitecture type | CPU + |
name | Mongoose 4 + |
pipeline stages | 16 + |
process | 8 nm (0.008 μm, 8.0e-6 mm) + |