Revision history of "samsung/exynos/5433"

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(cur | prev) 12:08, 6 March 2022‎ 186.194.191.211 (talk)‎ . . (3,977 bytes) (+203)‎ . . (undo)
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(cur | prev) 16:11, 29 December 2018‎ David (talk | contribs)‎ . . (3,774 bytes) (-73)‎ . . (undo)
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(cur | prev) 03:47, 31 July 2018‎ 110.54.145.183 (talk)‎ . . (526 bytes) (0)‎ . . (undo)
(cur | prev) 23:28, 28 March 2018‎ Inject (talk | contribs)‎ . . (526 bytes) (+469)‎ . . (undo)
(cur | prev) 21:11, 27 March 2018‎ Inject (talk | contribs)‎ . . (57 bytes) (+57)‎ . . (5433)

base frequency	1,900 MHz (1.9 GHz, 1,900,000 kHz) +, 1,300 MHz (1.3 GHz, 1,300,000 kHz) +, 2,340 MHz (2.34 GHz, 2,340,000 kHz) + and 1,101 MHz (1.101 GHz, 1,101,000 kHz) +
core count	8 +
core name	Cortex-A53 + and Cortex-A57 +
core voltage (min)	1 V (10 dV, 100 cV, 1,000 mV) +
designer	Samsung + and ARM Holdings +
die area	113 mm² (0.175 in², 1.13 cm², 113,000,000 µm²) +
family	Exynos +
first announced	September 7, 2014 +
first launched	September 7, 2014 +
full page name	samsung/exynos/5433 +
has ecc memory support	false +
instance of	integrated circuit +
integrated gpu	Mali-T760 +
integrated gpu base frequency	700 MHz (0.7 GHz, 700,000 KHz) +
integrated gpu designer	ARM Holdings +
integrated gpu execution units	6 +
isa	ARMv8 +
isa family	ARM +
l1$ size	320 KiB (327,680 B, 0.313 MiB) + and 256 KiB (262,144 B, 0.25 MiB) +
l1d$ size	128 KiB (131,072 B, 0.125 MiB) +
l1i$ size	192 KiB (196,608 B, 0.188 MiB) + and 128 KiB (131,072 B, 0.125 MiB) +
l2$ size	2 MiB (2,048 KiB, 2,097,152 B, 0.00195 GiB) + and 0.25 MiB (256 KiB, 262,144 B, 2.441406e-4 GiB) +
ldate	September 7, 2014 +
manufacturer	Samsung +
market segment	Mobile +
max cpu count	1 +
max memory bandwidth	13.91 GiB/s (14,243.84 MiB/s, 14.936 GB/s, 14,935.749 MB/s, 0.0136 TiB/s, 0.0149 TB/s) +
max memory channels	2 +
microarchitecture	Cortex-A53 + and Cortex-A57 +
min junction temperature	373.15 K (100 °C, 212 °F, 671.67 °R) +
model number	5433 +
name	Exynos 5433 +
process	20 nm (0.02 μm, 2.0e-5 mm) +
series	Exynos 7 +
smp max ways	1 +
supported memory type	LPDDR3-1866 +
tdp down	12 W (12,000 mW, 0.0161 hp, 0.012 kW) +
tdp down frequency	1,900 MHz (1.9 GHz, 1,900,000 kHz) +
tdp up	18 W (18,000 mW, 0.0241 hp, 0.018 kW) +
tdp up frequency	2,340 MHz (2.34 GHz, 2,340,000 kHz) +
technology	CMOS +
thread count	8 +
used by	Samsung Galaxy Note 4 +, Samsung Galaxy Note Edge + and Samsung Galaxy Tab S2 +
word size	64 bit (8 octets, 16 nibbles) +

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