Semiconductor & Computer Engineering
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Difference between revisions of "single diffusion break"
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{{title|Single Diffusion Break (SDB)}} | {{title|Single Diffusion Break (SDB)}} | ||
'''Single Diffusion Break''' ('''SDB''') or '''Single Dummy Gate''' ('''SDG''') is a semiconductor process flow technique that eliminates the need for an additional dummy gate padding at the cell boundaries. SDB is [[scaling booster|used to enable aggressive scaling]] of abutting cells without affecting the cell height or underlying devices. | '''Single Diffusion Break''' ('''SDB''') or '''Single Dummy Gate''' ('''SDG''') is a semiconductor process flow technique that eliminates the need for an additional dummy gate padding at the cell boundaries. SDB is [[scaling booster|used to enable aggressive scaling]] of abutting cells without affecting the cell height or underlying devices. | ||
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| + | ==Overview== | ||
| + | {{empty section}} | ||
| + | |||
| + | ==Industry== | ||
| + | ===Samsung=== | ||
| + | {{empty section}} | ||
| + | ===Intel=== | ||
| + | {{empty section}} | ||
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| + | == See also == | ||
| + | * [[Scaling boosters]] | ||
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| + | == Bibliography == | ||
| + | * {{bib|iedm|2017|Intel}} | ||
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| + | [[category:transistor gate]] | ||
| + | [[category:front-end-of-line device fabrication]] | ||
Revision as of 10:49, 20 June 2022
Single Diffusion Break (SDB) or Single Dummy Gate (SDG) is a semiconductor process flow technique that eliminates the need for an additional dummy gate padding at the cell boundaries. SDB is used to enable aggressive scaling of abutting cells without affecting the cell height or underlying devices.
Overview
 |
This section is empty; you can help add the missing info by editing this page. |
Industry
Samsung
| |
This section is empty; you can help add the missing info by editing this page. |
Intel
| |
This section is empty; you can help add the missing info by editing this page. |
See also
Bibliography
- Intel, 2017 IEEE 63rd International Electron Devices Meeting (IEDM).
