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Editing nanotube-ram
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== Characteristics == | == Characteristics == | ||
− | [[File:typical nram cell resistance.png|right|thumb|>10X difference in resistance between an ON and an OFF state | + | [[File:typical nram cell resistance.png|right|thumb|>10X difference in resistance between an ON and an OFF state (HC 30, Nantero)]] |
NRAM is non-volatile, retaining its state without power. Under typical operating temperature (~110-140 °C), NRAM is reported to have a data retention of around 12,000 years. Under worse operating temperatures (-55 °C or 300 °C), data retention remains well over 300 years (likely over 1,000 years). There is great potential for [[radiation hardness]] due to its immunity to alpha particles. The difference between 0 and 1 is greater than 10X in the resistance between the two electrodes. This makes detection relatively simple and no complex process controls and extra calibrations across the wafer. | NRAM is non-volatile, retaining its state without power. Under typical operating temperature (~110-140 °C), NRAM is reported to have a data retention of around 12,000 years. Under worse operating temperatures (-55 °C or 300 °C), data retention remains well over 300 years (likely over 1,000 years). There is great potential for [[radiation hardness]] due to its immunity to alpha particles. The difference between 0 and 1 is greater than 10X in the resistance between the two electrodes. This makes detection relatively simple and no complex process controls and extra calibrations across the wafer. | ||