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P6 - Microarchitectures - Intel
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P6 µarch
General Info
Arch TypeCPU
DesignerIntel
ManufacturerIntel
IntroductionOctober, 1995
Phase-outDecember, 2000
Process350 nm, 250 nm
Instructions
ISAx86-32
Succession
Pentium Pro processor with 1M of L2 cache.

P6 was the microarchitecture for Intel's for desktops and servers as a successor to P5. Introduced in 1995 and continued until 2000, P6 was fabricated using 350 nm and 250 nm processes. P6 was obsoleted by NetBurst in late 2000.

Codenames

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Process Technology

P6 was manufactured on the 0.35 µm process initially and later enjoyed a process shrink down to 0.25 µm, allowing for considerably lower voltage and higher clock speed at a smaller silicon die area. The shrink introduced a 5th metal layer which further reduced RC delay and die area. Intel claimed the channel area was reduced by 50% with the introduction of the 5th layer. The 5th layer also enabled Intel to support C4 packaging.

0.35 µm 0.25 µm Δ
Contacted Gate Pitch​ 550 nm 500 nm 0.91x
Interconnect Pitch 880 nm 640 nm 0.73x

Compiler support

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Architecture

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Die Shot

Tualatin

Klamath

  • 280 nm process CMOS
  • 4 metal layers
  • 7,500,000 transistors
  • 13.3 mm x 14.6 mm
  • 194.8 mm² die size
  • 540-pin BGA (Ball Grid Array)

intel p6 die shot.png

Pentium Pro

pentium pro die shot.png

References

  • Schutz, J., and R. Wallace. "A 450 MHz IA32 P6 family microprocessor." Solid-State Circuits Conference, 1998. Digest of Technical Papers. 1998 IEEE International. IEEE, 1998.
  • Brand, Adam, et al. "Intel’s 0.25 micron, 2.0 volts logic process technology." Intel Technology Journal Q 3 (1998): 1998.
  • Integrated Circuit Engineering (ICE) Corporation. "Construction Analysis Intel 266MHz 32-Bit Pentium II (Klamath) Processor"; Shared Construction Analysis (SCA) 9706-542.

Documents

codenameP6 +
designerIntel +
first launchedOctober 1995 +
full page nameintel/microarchitectures/p6 +
instance ofmicroarchitecture +
instruction set architecturex86-32 +
manufacturerIntel +
microarchitecture typeCPU +
nameP6 +
phase-outDecember 2000 +
process350 nm (0.35 μm, 3.5e-4 mm) + and 250 nm (0.25 μm, 2.5e-4 mm) +