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== Process Technology ==
 
== Process Technology ==
P6 was manufactured on the [[0.35 µm process]] initially and later enjoyed a process shrink down to [[0.25 µm]], allowing for considerably lower voltage and higher clock speed at a smaller silicon die area. The shrink introduced a 5th metal layer which further reduced RC delay and die area. Intel claimed the channel area was reduced by 50% with the introduction of the 5th layer. The 5th layer also enabled Intel to support C4 packaging.
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P6 was manufactured on [[0.35 µm process]] initially and alter enjoyed a process shrink down to [[0.25 µm]] allowing for considerably lower voltage and higher clock speed at a smaller silicon die area. With the shrink introduced a 5th metal layer which further reduced RC delay and die area. Intel claimed channel area was reduced by 50% with the introduction of the 5th layer. The 5th layer also enabled Intel to support C4 packaging.
  
 
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codenameP6 +
designerIntel +
first launchedOctober 1995 +
full page nameintel/microarchitectures/p6 +
instance ofmicroarchitecture +
instruction set architecturex86-32 +
manufacturerIntel +
microarchitecture typeCPU +
nameP6 +
phase-outDecember 2000 +
process350 nm (0.35 μm, 3.5e-4 mm) + and 250 nm (0.25 μm, 2.5e-4 mm) +