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Editing 10 nm lithography process
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− | Samsung's initial process was 10LPE (10 Low-Power Early) which was replaced by second generation evolved process 10LPP (10 Low-Power Plus). Samsung intends to introduce a third generational enhanced 10nm process called 8LPP (8 Low Power Plus) which will further improve performance and introduce a small density increase through cell enhancements and a narrower metal pitch. 8LPP improvements over 10LPP is similar to their 11LPP improvements over their 14LPP. It's worth noting that Samsung intends 8LPP to be their last non-[[ | + | Samsung's initial process was 10LPE (10 Low-Power Early) which was replaced by second generation evolved process 10LPP (10 Low-Power Plus). Samsung intends to introduce a third generational enhanced 10nm process called 8LPP (8 Low Power Plus) which will further improve performance and introduce a small density increase through cell enhancements and a narrower metal pitch. 8LPP improvements over 10LPP is similar to their 11LPP improvements over their 14LPP. It's worth noting that Samsung intends 8LPP to be their last non-[[EVU]] node. All subsequent nodes will use EUV. |
=== TSMC === | === TSMC === |