...), source (S) and drain (D) terminals. The gate is separated from the body by an [[gate oxide|insulating layer]] (pink).]] ...is a type of insulated-gate [[field-effect transistor]] that is fabricated by the [[thermal oxidation|controlled oxidation]] of a [[semiconductor]] (typi

...acturing using 32 nm process began in 2010. This technology was superseded by the [[28 nm lithography process|28 nm process]] (HN) / [[22 nm lithography TSMC cancelled its planned 32nm node process. Intel's 32 nm process became the f

| manufacturer = TSMC ...of {{arch|32}} and {{arch|64}} mobile [[ARM]] performance SoCs introduced by [[HiSilicon]] in [[2014]] as a successor to the {{\\|K3}} series.