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- [[Category:random-access memory]]1 member (0 subcategories, 0 files) - 16:50, 16 September 2018
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- ...nipulation|string handling]], [[IO processing|input/output processing]], [[memory allocation]], [[math computations]], [[thread management]], and various oth |{{C|stdlib.h|<stdlib.h>}} || C89 || Provides core library functions such as memory management and random number generation.5 KB (818 words) - 15:28, 9 March 2016
- Hash tables, unlike INI files, are stored completely in memory and are never written to disk (unless the /hsave command is used), making t ...e saved to a disk file using /hsave if mIRC needs to have the hashtable in memory after an exit then restart. You can reload the table from a file after mIRC30 KB (5,149 words) - 01:46, 30 November 2018
- {{x86 title|Total Memory Encryption (TME)}}{{x86 isa main}} ...gle ephemeral key. TME can be further extended with the '''Multi-Key Total Memory Encryption''' ('''MKTME''') extension which builds on TME and adds support6 KB (970 words) - 02:40, 17 December 2017
- {{x86 title|Secure Memory Encryption (SME)}}{{x86 isa main}} ...a more limited form of SME used to transparently encrypt the full physical memory. '''Secure Encrypted Virtualization''' ('''SEV''') extends SME to {{x86|AMD7 KB (1,115 words) - 19:03, 7 May 2020
- ...essing units'' (MPU) along with a large pool of high-banked high-bandwidth memory. Each of the MPU pairs integrates a 32x32 array for a total of 98,304 [[FLO ...on-chip router (OCR), the control, the MAC processing unit (MPU), and the memory subsystem.11 KB (1,646 words) - 13:35, 26 April 2020
- ...nce-change]] [[memory-class storage|memory-class storage]] [[random access memory|RAM]]. NRAM is proprietary technology developed by [[Nantero]] licenseable ...underlying device and substrate need not matter. It is [[resistance-change memory]] meaning an "off" state is a result of high [[resistance]] while an "on" s6 KB (1,010 words) - 02:42, 31 January 2019
- {{title|Resistance-Change Memory (RCM)}} ...nce-change memory''' ('''RCM''') is a type of [[non-volatile random-access memory]] that works by varying the resistance across a switching medium situated b370 bytes (41 words) - 16:47, 16 September 2018
- {{title|Memory Scrubbing}} ...rs to the process of correcting or 'scrubbing' erroneously flipped bits in memory as a result of [[transient faults]] such as those caused by physical phenom2 KB (278 words) - 02:08, 26 November 2018
- The CPU core, the memory controllers, and other high speed peripherals are linked by an internal Sys ...e 500 MHz model cannot quite realize the maximum bandwidth of SDR-133 memory. This also applies to the Au1500 and Au1100 processors.31 KB (4,972 words) - 03:09, 20 March 2022