Packaging

Technologies

Wire bonding TCI TSV TGV F2F FC

Concepts

COB CSP PiP SiP PoP

Single-Row

SiP

Dual-Row

DIP DFN SOIC TSOP ZIP

Quad-Row

QFN

Grid Array

BGA LGA PGA

2.5D IC

2.5D IC Interposer Embedded Interposer Embedded Bridge CoWoS EMIB

3D IC

3D IC Foveros WoW SoIC

Through-Silicon Via (TSV) is a high-performance vertical interconnect technology used to transmit signals and power between multiple stacked dies through piercings in the individual dies.

Overview

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History

TSVs were invented by William Shockley in his 1958 patent, U.S. Patent 3,044,909, "Semiconductive wafer and method of making the same." Originally called "deep pits", Shockley described etching deep pits in order to connect two wafers together, allowing for signals from its top side to its down side and vice versa. In 1964, Merlin Smith and Stern Emanuel from IBM further developed this idea. Filed under as U.S. Patent 3,343,256, "Methods of making thru-connections in semiconductor wafers", more formally develops the process of producing through-silicon vias.

See also

• TCI, alternative technology to TSVs.