-
WikiChip
WikiChip
-
Architectures
Popular x86
-
Intel
- Client
- Server
- Big Cores
- Small Cores
-
AMD
Popular ARM
-
ARM
- Server
- Big
- Little
-
Cavium
-
Samsung
-
-
Chips
Popular Families
-
Ampere
-
Apple
-
Cavium
-
HiSilicon
-
MediaTek
-
NXP
-
Qualcomm
-
Renesas
-
Samsung
-
From WikiChip
Difference between revisions of "local layout effects"
(LLEs) |
(No difference)
|
Latest revision as of 16:54, 15 April 2020
Local layout effects (LLEs) or Layout-dependent effects (LDEs) are envrionmental effects that negatively impact the electrical characteristics of a semiconductor device due to its physical layout and proximity to other features on an integrated circuit.
Overview[edit]
The physical environment (i.e., layout) in which a semiconductor device resides in can vary its characteristics. For example, a transistor that is placed close to the edge of a well will exhibit threshold voltage shift due to ion scattering back out of photoresist during ion implantation. All the various device effects are collectivity called Local layout effects (LLEs).
Effects[edit]
This list is incomplete; you can help by expanding it.