Semiconductor & Computer Engineering
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{{title|ThruChip Interface (TCI)}}{{3d integration}} | {{title|ThruChip Interface (TCI)}}{{3d integration}} | ||
'''ThruChip Interface''' ('''TCI''') is a high-performance [[wireless communication|wireless]] [[vertical signaling|vertical]] [[interconnect]] technology used to transmit signals between multiple [[stacked dies]]. TCI is an alternative technology to [[through-silicon via]]. | '''ThruChip Interface''' ('''TCI''') is a high-performance [[wireless communication|wireless]] [[vertical signaling|vertical]] [[interconnect]] technology used to transmit signals between multiple [[stacked dies]]. TCI is an alternative technology to [[through-silicon via]]. | ||
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| + | == Overview == | ||
| + | ThruChip Interface splits up the problem of [[vertical signaling|vertical]] [[interconnect]]s into two separate problems: data communication and power distribution. For data communication, TCI uses a [[wireless communication|wireless]] [[near-field]] [[inductive coupling]]. Since the data is separate from the power distribution solution, solving the aspect of power is fairly trivial in one of the many solutions such as [[wire bond]], [[redistribution layer|RDL]], and [[TSV]]. For ThruChip in particular, the recommended solution is [[highly-doped silicon via]] (HDSV). | ||
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| + | Under normal circumstances, chip designers try to avoid forming too much coupling between wires. TCI attempts to leverage this problem to from inductors which can then be used to communicate with a coil [[stacked dies|stacked]] above and below the current die. Communication can extend to a whole stack of dies. TCI relies on highly-advanced [[wafer thinning]] process capable of providing sub-10µm thick [[wafers]]. Because the diameter of the inductor is roughly three times the vertical communication distance, with [[ultra-thin wafers]] the inductors can shrink quietly substantially. It's worth noting that since TCI uses a magnetic field for communication, the coils can then be placed on some top layer (above logic, power rails, etc..) which will permeate through all the layers, including the silicon itself, without affecting the rest of the circuit. | ||
Revision as of 19:27, 21 April 2018
Template:3d integration ThruChip Interface (TCI) is a high-performance wireless vertical interconnect technology used to transmit signals between multiple stacked dies. TCI is an alternative technology to through-silicon via.
Overview
ThruChip Interface splits up the problem of vertical interconnects into two separate problems: data communication and power distribution. For data communication, TCI uses a wireless near-field inductive coupling. Since the data is separate from the power distribution solution, solving the aspect of power is fairly trivial in one of the many solutions such as wire bond, RDL, and TSV. For ThruChip in particular, the recommended solution is highly-doped silicon via (HDSV).
Under normal circumstances, chip designers try to avoid forming too much coupling between wires. TCI attempts to leverage this problem to from inductors which can then be used to communicate with a coil stacked above and below the current die. Communication can extend to a whole stack of dies. TCI relies on highly-advanced wafer thinning process capable of providing sub-10µm thick wafers. Because the diameter of the inductor is roughly three times the vertical communication distance, with ultra-thin wafers the inductors can shrink quietly substantially. It's worth noting that since TCI uses a magnetic field for communication, the coils can then be placed on some top layer (above logic, power rails, etc..) which will permeate through all the layers, including the silicon itself, without affecting the rest of the circuit.