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Difference between revisions of "electronic-grade silicon"

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{{title|Electronic-Grade Silicon (EGS)}}
 
{{title|Electronic-Grade Silicon (EGS)}}
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'''Electronic-grade silicon''' ('''EGS''') or '''semiconductor-grade silicon''' ('''SGS''') is a highly-purified version of the [[metallurgical-grade silicon]] with extremely low impurities suitable for microelectronic device applications. Electronic-grade silicon is the raw material used for the [[crystal growth|growth of single-crystal silicon]] in the manufacturing of [[silicon wafers]].
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'''Electronic-grade silicon''' ('''EGS''' or '''EG-Si''') or '''semiconductor-grade silicon''' ('''SGS''') is a highly-purified version of the [[metallurgical-grade silicon]] with extremely low impurities suitable for microelectronic device applications. Electronic-grade silicon is the raw material used for the [[crystal growth|growth of single-crystal silicon]] in the manufacturing of [[silicon wafers]].
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== Overview ==
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While pure silicon (referred to as [[metallurgical-grade silicon]]) is of very good quality, it is still unsuitable for electronic device fabrication. Even impurities in the order of [[parts per million]] or less have significant impact on [[carrier mobility]], reliability, and other aspects of the microelectronic device.
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{| class="wikitable"
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!  colspan="5" | Impurity Concentrations in MG-Si (ppm)
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|-
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! Element !! Concentration !!   !! Element !! Concentration
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|-
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| Al || 1000-5000 || || B || 35-50
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|-
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| P || 20-50 || || Ca || 250-600
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|-
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| Cr || 50-200 || || Cu || 15-60
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|-
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| Fe || 1600-6500 || || Mn || 50-100
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|-
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| Mo || 2-20 || || Ni || 20-100
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|-
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| Ti || 150-300 || || V || 50-250
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|-
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| Zr || 20-30
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|}
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Metallurgical-grade silicon must be furthered purified to levels of usually less than a [[part per billion]] in order to be called electronic-grade silicon which can be used in subsequent fabrication steps.
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{| class="wikitable"
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!  colspan="5" | Impurity Concentrations in EG-Si (ppb)
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|-
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! Element !! Concentration !!   !! Element !! Concentration
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|-
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| B || ≤ 0.1 || || C || 50-1000
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|-
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| Cr || ≤ 0.01 || || Co || ≤ 0.01
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|-
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| Cu || ≤ 0.1 || || Fe || 0.1 - 1
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|-
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| Ni || 0.1 - 0.5 || || O || 100-500
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|-
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| P || ≤ 0.5 || || Zn || ≤ 0.1
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|}

Revision as of 23:06, 4 March 2018

Electronic-grade silicon (EGS or EG-Si) or semiconductor-grade silicon (SGS) is a highly-purified version of the metallurgical-grade silicon with extremely low impurities suitable for microelectronic device applications. Electronic-grade silicon is the raw material used for the growth of single-crystal silicon in the manufacturing of silicon wafers.

Overview

While pure silicon (referred to as metallurgical-grade silicon) is of very good quality, it is still unsuitable for electronic device fabrication. Even impurities in the order of parts per million or less have significant impact on carrier mobility, reliability, and other aspects of the microelectronic device.

Impurity Concentrations in MG-Si (ppm)
Element Concentration   Element Concentration
Al 1000-5000 B 35-50
P 20-50 Ca 250-600
Cr 50-200 Cu 15-60
Fe 1600-6500 Mn 50-100
Mo 2-20 Ni 20-100
Ti 150-300 V 50-250
Zr 20-30

Metallurgical-grade silicon must be furthered purified to levels of usually less than a part per billion in order to be called electronic-grade silicon which can be used in subsequent fabrication steps.

Impurity Concentrations in EG-Si (ppb)
Element Concentration   Element Concentration
B ≤ 0.1 C 50-1000
Cr ≤ 0.01 Co ≤ 0.01
Cu ≤ 0.1 Fe 0.1 - 1
Ni 0.1 - 0.5 O 100-500
P ≤ 0.5 Zn ≤ 0.1
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