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Difference between revisions of "resistance-change memory"
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+ | [[Category:non-volatile random-access memory]] | ||
+ | [[Category:random-access memory types]] | ||
+ | [[Category:resistance-change memory]] |
Latest revision as of 16:47, 16 September 2018
Resistance-change memory (RCM) is a type of non-volatile random-access memory that works by varying the resistance across a switching medium situated between the two electrodes.
This article is still a stub and needs your attention. You can help improve this article by editing this page and adding the missing information. |