From WikiChip
Difference between revisions of "Template:wafer tech"

(epi and soi added)
 
(One intermediate revision by the same user not shown)
Line 10: Line 10:
 
** [[czochralski growth|Czochralski growth]] (CZ)
 
** [[czochralski growth|Czochralski growth]] (CZ)
 
**  [[float-zone growth|Float-zone growth]] (FZ)
 
**  [[float-zone growth|Float-zone growth]] (FZ)
 +
* Preparation
 +
** [[ingot cropping|Ingot cropping]]
 +
** [[ingot squaring|Ingot squaring]]
 +
** [[rod grinding|Rod grinding]]
 +
<div class="header">Wafer Processing</div>
 +
* Slicing
 +
** [[wire sawing|Wire sawing]]
 +
** [[internal diameter sawing|Internal diameter sawing]] (IDs)
 +
* Profile control
 +
** [[wafer edge profiling|Wafer edge profiling]]
 +
** [[wafer lapping|Wafer lapping]]
 +
** [[wafer etching|Wafer etching]]
 +
** [[wafer polishing|Wafer polishing]]
 +
* Additional layers
 +
** [[epitaxial deposition|Epitaxial deposition]]
 +
*** [[epitaxial wafer|Epitaxial wafer]]
 +
** [[layer transfer|Layer transfer]] (LT)
 +
*** [[soi wafer|SOI wafer]]
 +
* Preparation
 +
** [[wafer inspection|Wafer inspection]]
 +
** [[wafer packaging|Wafer packaging]]
 +
** [[wafer shipping|Wafer shipping]]
 
</div>{{Navbar|Template:wafer tech|text=|mini=1|style=float:right;}}
 
</div>{{Navbar|Template:wafer tech|text=|mini=1|style=float:right;}}
 
</div>
 
</div>

Latest revision as of 11:09, 5 March 2018